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TDF8591TH 数据表(PDF) 14 Page - NXP Semiconductors |
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TDF8591TH 数据表(HTML) 14 Page - NXP Semiconductors |
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14 / 34 page ![]() TDF8591TH_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 5 March 2008 14 of 34 NXP Semiconductors TDF8591TH 2 × 100 W SE (4 Ω) or 1 × 310 W BTL (4 Ω) class-D amplifier 10.2 Dynamic characteristics (BTL) [1] Rs(L) is the series resistance of inductor of low-pass LC filter in the application. [2] Output power is measured indirectly; based on RDSon measurement (see Section 12.2). [3] THD is measured in a bandwidth of 22 Hz to 20 kHz, AES brick wall. Maximum limit is guaranteed but may not be 100 % tested. [4] Vripple = Vripple(max) = 2 V (peak-to-peak value); RS = 0 Ω. [5] B = 22 Hz to 20 kHz, AES brick wall (see Section 12.4). [6] B = 22 Hz to 20 kHz, AES brick wall, independent on RS (see Section 12.4). Table 9. Dynamic characteristics (BTL) VP = ±27 V; RL = 8 Ω; fi = 1 kHz; fosc = 310 kHz; Rs(L) < 0.1 Ω [1]; Tamb = −40 °C to +85 °C; Tj = −40 °C to +150 °C; unless otherwise specified. See Section 12.7 for the BTL application schematics. The 2nd order demodulation filter coil is referred to as L and the capacitor as C. Symbol Parameter Conditions Min Typ Max Unit Po output power L = 10 µH,C=1 µF; T j =85 °C; RL =4 Ω; VP = ±18 V; THD = 0.5 % [2] - 110 - W L=10 µH;C=1 µF; Tj =85 °C; RL =4 Ω; VP = ±18 V; THD = 10 % [2] - 139 - W L = 22 µH; C = 680 nF; Tj = 85 °C; RL =4 Ω; VP = ±27 V; THD = 0.5 % [2] - 250 - W L = 22 µH; C = 680 nF; Tj = 85 °C; RL =4 Ω; VP = ±27 V; THD = 10 % [2] - 310 - W IOM peak output current current limiting, see Section 6.4.3 12 --A THD total harmonic distortion Po = 1 W; fi = 1 kHz [3] - 0.02 0.2 % Po = 1 W; fi = 10 kHz [3] - 0.15 - % Gv(cl) closed-loop voltage gain 31 32 33 dB SVRR supply voltage ripple rejection operating; fripple = 100 Hz [4] -68 - dB operating; fripple = 1 kHz [4] 50 68 - dB mute; fripple = 1 kHz [4] -68 - dB standby; fripple = 100 Hz [4] -80 - dB |Zi(dif)| differential input impedance measured between the input pins INxP and INxM 22 34 - k Ω Vn(o) noise output voltage operating; VP = ±27 V; RS = 0 Ω [5] - 240 - µV operating; VP = ±18 V; RS = 0 Ω [5] - 200 - µV mute; VP = ±27 V [6] - 180 - µV mute; VP = ±18 V [6] - 125 - µV αmute mute attenuation fi = 1 kHz; Vi = 1 V (RMS value) - 70 - dB CMRR common mode rejection ratio fi(CM) = 1 kHz; Vi(CM) = 1 V (RMS value) - 75 - dB |
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