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TDF8591TH 数据表(PDF) 29 Page - NXP Semiconductors |
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TDF8591TH 数据表(HTML) 29 Page - NXP Semiconductors |
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29 / 34 page ![]() TDF8591TH_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 5 March 2008 29 of 34 NXP Semiconductors TDF8591TH 2 × 100 W SE (4 Ω) or 1 × 310 W BTL (4 Ω) class-D amplifier a. RL =2 Ω; VP = ±28 V. b. RL =4 Ω; VP = ±29 V Fig 30. Efficiency as a function of output power (one channel), SE application Po (W) 0 200 160 80 120 40 001aah224 40 60 20 80 100 η (%) 0 001aah225 Po (W) 0 120 80 40 40 60 20 80 100 η (%) 0 a. RL =4 Ω; VP = ±18 V. b. RL =4 Ω; VP = ±27 V Fig 31. Efficiency as a function of output power, BTL application 001aah226 Po (W) 0 150 100 50 40 60 20 80 100 η (%) 0 001aah227 Po (W) 0 150 100 50 40 60 20 80 100 η (%) 0 |
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