ST10F276Z5 datasheet(34/239 Pages) STMICROELECTRONICS

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Internal Flash memory

ST10F276Z5

34/239

4.4.5

Flash data register 0 low

The Flash address registers (FARH/L) and the Flash data registers (FDR1H/L-FDR0H/L)

are used during the program operations to store Flash Address in which to program and

data to program.

4.4.6

Flash data register 0 high

Table 11.

Banks (BxS) and sectors (BxFy) status bits meaning

ERR

SUSP

BxS = 1 meaning

BxFy = 1 meaning

Erase error in bank x

Erase error in sector y of bank x

Erase suspended in bank x

Erase suspended in sector y of bank x

Don’t care

FDR0L (0x0E 0008)

FCR

Reset value: FFFFh

987

65432

DIN15 DIN14 DIN13 DIN12 DIN11 DIN10

DIN9

DIN8

DIN7

DIN6

DIN5

DIN4

DIN3

DIN2

DIN1

DIN0

Table 12.

Flash data register 0 low

Bit

Function

DIN(15:0)

Data input 15:0

These bits must be written with the data to program the Flash with the following

operations: word program (32-bit), double word program (64-bit) and set protection.

FDR0H (0x0E 000A)

FCR

Reset value: FFFFh

987

65432

DIN31 DIN30 DIN29 DIN28 DIN27 DIN26 DIN25 DIN24 DIN23 DIN22 DIN21 DIN20 DIN19 DIN18 DIN17 DIN16

Table 13.

Flash data register 0 high

Bit

Function

DIN(31:16)

Data input 31:16

These bits must be written with the data to program the Flash with the following

operations: word program (32-bit), double word program (64-bit) and set protection.

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