AS5045ASST datasheet(8/33 Pages) AMSCO

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AS5045

Data Sheet

www.austriamicrosystems.com

Revision 1.7

8 – 33

6.4.5

Tristate CMOS Output: DO

(operating conditions: Tamb = -40 to +125°C, VDD5V = 3.0-3.6V (3V operation) VDD5V = 4.5-5.5V (5V operation)

unless otherwise noted)

Parameter

Symbol

Min

Max

Unit

Note

High level output voltage

VOH

VDD5V –0.5

Low level output voltage

VOL

VSS+0.4

Output current

VDD5V: 4.5V

VDD5V: 3V

Tri-state leakage current

IOZ

µA

6.5

Magnetic Input Specification

(operating conditions: Tamb = -40 to +125°C, VDD5V = 3.0-3.6V (3V operation) VDD5V = 4.5-5.5V (5V operation)

unless otherwise noted)

Two-pole cylindrical diametrically magnetised source:

Parameter

Symbol

Min

Typ

Max

Unit

Note

Diameter

dmag

Thickness

tmag

2.5

Recommended magnet: Ø 6mm x 2.5mm for

cylindrical magnets

Magnetic input field

amplitude

Bpk

Required vertical component of the magnetic

field strength on the die’s surface, measured

along a concentric circle with a radius of 1.1mm

Magnetic offset

Boff

± 10

Constant magnetic stray field

Field non-linearity

Including offset gradient

2.44

146 rpm @ 4096 positions/rev.; fast mode

Input frequency

(rotational speed of

magnet)

fmag_abs

0.61

36.6rpm @ 4096 positions/rev.; slow mode

Displacement radius

Disp

0.25

Max. offset between defined device center and

magnet axis (see Figure 18)

Eccentricity

Ecc

100

µm

Eccentricity of magnet center to rotational axis

-0.12

NdFeB (Neodymium Iron Boron)

Recommended magnet

material and

temperature drift

-0.035

%/K

SmCo (Samarium Cobalt)

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