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AS5045ASST 数据表(PDF) 25 Page - ams AG |
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AS5045ASST 数据表(HTML) 25 Page - ams AG |
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25 / 33 page ![]() AS5045 Data Sheet www.austriamicrosystems.com Revision 1.7 25 – 33 15 Simulation Modeling Figure 20. Arrangement of Hall Sensor Array on Chip (principle) With reference to Figure 20, a diametrically magnetized permanent magnet is placed above or below the surface of the AS5045. The chip uses an array of Hall sensors to sample the vertical vector of a magnetic field distributed across the device package surface. The area of magnetic sensitivity is a circular locus of 1.1mm radius with respect to the center of the die. The Hall sensors in the area of magnetic sensitivity are grouped and configured such that orthogonally related components of the magnetic fields are sampled differentially. The differential signal Y1-Y2 will give a sine vector of the magnetic field. The differential signal X1-X2 will give an orthogonally related cosine vector of the magnetic field. The angular displacement ( Θ) of the magnetic source with reference to the Hall sensor array may then be modelled by: () () ° ± − − = Θ 5 . 0 2 1 2 1 arctan X X Y Y The ±0.5° angular error assumes a magnet optimally aligned over the center of the die and is a result of gain mismatch errors of the AS5045. Placement tolerances of the die within the package are ±0.235mm in X and Y direction, using a reference point of the edge of pin #1 (see Figure 20). In order to neglect the influence of external disturbing magnetic fields, a robust differential sampling and ratiometric calculation algorithm has been implemented. The differential sampling of the sine and cosine vectors removes any common mode error due to DC components introduced by the magnetic source itself or external disturbing magnetic fields. A ratiometric division of the sine and cosine vectors removes the need for an accurate absolute magnitude of the magnetic field and thus accurate Z-axis alignment of the magnetic source. The recommended differential input range of the magnetic field strength (B(X1-X2), B(Y1-Y2)) is ±75mT at the surface of the die. In addition to this range, an additional offset of ±5mT, caused by unwanted external stray fields is allowed. |
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