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L6360 数据表(PDF) 13 Page - STMicroelectronics

部件名 L6360
功能描述  IO-Link communication master transceiver IC
PDF  65 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

L6360 数据表(HTML) 13 Page - STMicroelectronics

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L6360
Electrical characteristics
Doc ID 022817 Rev 2
13/65
ILIMQ
C/QO low- and high-side limitation
current
500
1600
mA
IOFFL
L+ OFF-state current
ENL+ = 0,
VL+ = 0 V
0
200
µA
ICOL
L+ cutoff current
480
580
730
mA
ILIML
L+ limitation current
500
1600
mA
IINC/Qi
C/QI pull-down current
Programmable (see section
Control register 2)
56.5
mA
23.3
mA
IINI/Q
I/Q pull-down current
(see Control register 2)2
3
mA
RONL
L+ high-side ON-state resistance
IOUT = 0.2 A at TJ = 25 °C
1
Ω
IOUT = 0.2 A at TJ = 125 °C
2
Ω
RONCQH
C/QO high-side ON-state resistance
IOUT = 0.2 A at TJ = 25 °C
1
Ω
IOUT = 0.2 A at TJ = 125 °C
2
Ω
RONCQL
C/QO low-side ON-state resistance
IOUT = 0.2 A at TJ = 25 °C
0.6
Ω
IOUT = 0.2 A at TJ = 125 °C
1.2
Ω
tdINC/Q
INC/Q to C/QO propagation delay time
Push-pull (CQO rising edge)
140
ns
Push-pull (CQO falling edge)
160
ns
tENC/Q
ENC/Q to C/QO propagation delay time
Push-pull (CQO rising edge)
110
ns
Push-pull (CQO falling edge)
225
ns
trPP
C/Q rise time in push-pull
configuration
10% to 90%. See Figure 3
250
860
ns
tfPP
C/Q fall time in push-pull configuration
10% to 90%. See Figure 3
290
860
ns
trHS
C/Q rise time in high-side
configuration
410
ns
tfHS
C/Q fall time in high-side configuration
700
ns
trLS
C/Q rise time in low-side configuration
750
ns
tfLS
C/Q fall time in low-side configuration
530
ns
tENL
ENL to L+ propagation delay time
1
µs
trL+
L+ rise time
3
µs
tfL+
L+ fall time
25
µs
tdC/Qi
C/QI to OUTC/Q (falling) propagation
delay time
40
ns
C/QI to OUTC/Q (rising) propagation
delay time
100
ns
tdI/Q
I/Q to OUTI/Q (falling) propagation
delay time
40
ns
I/Q to OUTI/Q (rising) propagation
delay time
100
ns
Table 6.
Electrical characteristics - power section (continued)
Symbol
Parameter
Test condition
Min.
Typ.
Max. Unit



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