STM32F103C8T7 datasheet(55/105 Pages) STMICROELECTRONICS

55 / 105 page

STM32F103x8, STM32F103xB

Electrical characteristics

Doc ID 13587 Rev 15

55/105

Figure 25.

Typical application with a 32.768 kHz crystal

5.3.7

Internal clock source characteristics

The parameters given in Table 24 are derived from tests performed under ambient

temperature and VDD supply voltage conditions summarized in Table 9.

High-speed internal (HSI) RC oscillator

ai14146

OSC32_OU T

OSC32_IN

fLSE

CL1

STM32F103xx

32.768 kH z

resonator

CL2

Resonator with

integrated capacitors

Bias

controlled

gain

Table 24.

HSI oscillator characteristics(1)

VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI

Frequency

MHz

DuCy(HSI) Duty cycle

ACCHSI

Accuracy of the HSI

oscillator

User-trimmed with the RCC_CR

Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from

the ST website www.st.com.

1(3)

Guaranteed by design, not tested in production.

Factory-

calibrated

(4)(5)

Based on characterization, not tested in production.

The actual frequency of HSI oscillator may be impacted by a reflow, but does not drift out of the specified

range.

TA = –40 to 105 °C

–2

2.5

TA = –10 to 85 °C

–1.5

2.2

TA = 0 to 70 °C

–1.3

TA = 25 °C

–1.1

1.8

tsu(HSI)

(4)

HSI oscillator

startup time

µs

IDD(HSI)

(4)

HSI oscillator power

consumption

100

µA

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