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STM32F103C8T7 数据表(PDF) 75 Page - STMicroelectronics |
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STM32F103C8T7 数据表(HTML) 75 Page - STMicroelectronics |
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75 / 105 page ![]() STM32F103x8, STM32F103xB Electrical characteristics Doc ID 13587 Rev 15 75/105 Figure 36. USB timings: definition of data signal rise and fall time 5.3.17 CAN (controller area network) interface Refer to Section 5.3.12: I/O current injection characteristics for more details on the input/output alternate function characteristics (CAN_TX and CAN_RX). Table 44. USB DC electrical characteristics Symbol Parameter Conditions Min.(1) 1. All the voltages are measured from the local ground potential. Max.(1) Unit Input levels VDD USB operating voltage(2) 2. To be compliant with the USB 2.0 full-speed electrical specification, the USBDP (D+) pin should be pulled up with a 1.5 k Ω resistor to a 3.0-to-3.6 V voltage range. 3.0(3) 3. The STM32F103xx USB functionality is ensured down to 2.7 V but not the full USB electrical characteristics which are degraded in the 2.7-to-3.0 V VDD voltage range. 3.6 V VDI (4) 4. Guaranteed by design, not tested in production. Differential input sensitivity I(USBDP, USBDM) 0.2 V VCM (4) Differential common mode range Includes VDI range 0.8 2.5 VSE (4) Single ended receiver threshold 1.3 2.0 Output levels VOL Static output level low RL of 1.5 kΩ to 3.6 V (5) 5. RL is the load connected on the USB drivers 0.3 V VOH Static output level high RL of 15 kΩ to VSS (5) 2.8 3.6 Table 45. USB: Full-speed electrical characteristics(1) 1. Guaranteed by design, not tested in production. Symbol Parameter Conditions Min Max Unit Driver characteristics tr Rise time(2) 2. Measured from 10% to 90% of the data signal. For more detailed informations, please refer to USB Specification - Chapter 7 (version 2.0). CL = 50 pF 420 ns tf Fall time(2) CL = 50 pF 4 20 ns trfm Rise/ fall time matching tr/tf 90 110 % VCRS Output signal crossover voltage 1.3 2.0 V ai14137 tf Differen tial data lines VSS VCRS tr Crossover points |
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