STM32F030C8 datasheet(52/88 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F030x4 STM32F030x6 STM32F030x8

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DocID024849 Rev 1

Note:

For information on selecting the crystal, refer to the application note AN2867 “Oscillator

design guide for ST microcontrollers” available from the ST website www.st.com.

Figure 15. Typical application with a 32.768 kHz crystal

Note:

An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden

to add one.

6.3.8

Internal clock source characteristics

The parameters given in Table 33 are derived from tests performed under ambient

temperature and supply voltage conditions summarized in Table 18: General operating

conditions. The provided curves are characterization results, not tested in production.

High-speed internal (HSI) RC oscillator

MS30253V1

OSC32_OU T

OSC32_IN

fLSE

CL1

32.768 kH z

resonator

CL2

Resonator with

integrated capacitors

Drive

programmable

amplifier

Table 33. HSI oscillator characteristics(1)

1. VDDA = 3.3 V, TA = –40 to 85 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI

Frequency

MHz

TRIM

HSI user trimming step

1(2)

2. Guaranteed by design, not tested in production.

DuCy(HSI)

Duty cycle

45(2)

-55(2)

ACCHSI

Accuracy of the HSI

oscillator (factory

calibrated)(3)

3. With user calibration.

TA = –40 to 85 °C

±5

TA = 25 °C

±1

tsu(HSI)

HSI oscillator startup

time

1(2)

-2(2)

µs

IDDA(HSI)

HSI oscillator power

consumption

-80-

µA

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