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STM32F030C8 数据表(PDF) 42 Page - STMicroelectronics |
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STM32F030C8 数据表(HTML) 42 Page - STMicroelectronics |
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42 / 88 page ![]() Electrical characteristics STM32F030x4 STM32F030x6 STM32F030x8 42/88 DocID024849 Rev 1 6.3.5 Supply current characteristics The current consumption is a function of several parameters and factors such as the operating voltage, ambient temperature, I/O pin loading, device software configuration, operating frequencies, I/O pin switching rate, program location in memory and executed binary code. The current consumption is measured as described in Figure 11: Current consumption measurement scheme. All Run-mode current consumption measurements given in this section are performed with a reduced code that gives a consumption equivalent to CoreMark code. Typical and maximum current consumption The MCU is placed under the following conditions: All I/O pins are in input mode with a static value at VDD or VSS (no load) All peripherals are disabled except when explicitly mentioned The Flash memory access time is adjusted to the fHCLK frequency (0 wait state from 0 to 24 MHz and 1 wait state above 24 MHz) Prefetch is ON when the peripherals are enabled, otherwise it is OFF (to enable prefetch the PRFTBE bit in the FLASH_ACR register must be set before clock setting and bus prescaling) When the peripherals are enabled fPCLK = fHCLK The parameters given in Table 22 to are derived from tests performed under ambient temperature and supply voltage conditions summarized in Table 18: General operating conditions. V REFINT Internal reference voltage spread over the temperature range VDDA = 3 V ±10 mV - - 10(3) mV TCoeff Temperature coefficient - - 100(3) ppm/°C 1. Data based on characterization results, not tested in production. 2. Shortest sampling time can be determined in the application by multiple iterations. 3. Guaranteed by design, not tested in production. Table 21. Embedded internal reference voltage (continued) Symbol Parameter Conditions Min Typ Max Unit |
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