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STM32F030C8 数据表(PDF) 41 Page - STMicroelectronics |
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STM32F030C8 数据表(HTML) 41 Page - STMicroelectronics |
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41 / 88 page ![]() DocID024849 Rev 1 41/88 STM32F030x4 STM32F030x6 STM32F030x8 Electrical characteristics 73 6.3.2 Operating conditions at power-up / power-down The parameters given in Table 19 are derived from tests performed under the ambient temperature condition summarized in Table 18. 6.3.3 Embedded reset and power control block characteristics The parameters given in Table 20 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 18: General operating conditions. 6.3.4 Embedded reference voltage The parameters given in Table 21 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 18: General operating conditions. Table 19. Operating conditions at power-up / power-down Symbol Parameter Conditions Min Max Unit tVDD VDD rise time rate 0 µs/V VDD fall time rate 20 tVDDA VDDA rise time rate 0 VDDA fall time rate 20 Table 20. Embedded reset and power control block characteristics Symbol Parameter Conditions Min Typ Max Unit VPOR/PDR (1) 1. The PDR detector monitors VDD and also VDDA (if kept enabled in the option bytes). The POR detector monitors only VDD. Power on/power down reset threshold Falling edge 1.8(2) 2. The product behavior is guaranteed by design down to the minimum VPOR/PDR value. 1.88 2.06 V Rising edge 1.84 1.92 2.10 V VPDRhyst (1) PDR hysteresis - 40 - mV tRSTTEMPO (3) 3. Guaranteed by design, not tested in production. Reset temporization 1.5 2.5 4.5 ms Table 21. Embedded internal reference voltage Symbol Parameter Conditions Min Typ Max Unit VREFINT Internal reference voltage –40 °C < TA < +85 °C 1.16 1.2 1.24(1) V TS_vrefint (2) ADC sampling time when reading the internal reference voltage - 5.1 17.1(3) µs |
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