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STM32F030C8 数据表(PDF) 53 Page - STMicroelectronics |
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STM32F030C8 数据表(HTML) 53 Page - STMicroelectronics |
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53 / 88 page ![]() DocID024849 Rev 1 53/88 STM32F030x4 STM32F030x6 STM32F030x8 Electrical characteristics 73 High-speed internal 14 MHz (HSI14) RC oscillator (dedicated to ADC) Low-speed internal (LSI) RC oscillator 6.3.9 PLL characteristics The parameters given in Table 36 are derived from tests performed under ambient temperature and supply voltage conditions summarized in Table 18: General operating conditions. Table 34. HSI14 oscillator characteristics(1) 1. VDDA = 3.3 V, TA = –40 to 85 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI14 Frequency - 14 MHz TRIM HSI14 user-trimming step - - 1(2) 2. Guaranteed by design, not tested in production. % DuCy(HSI14) Duty cycle 45(2) -55(2) % ACCHSI14 Accuracy of the HSI14 oscillator (factory calibrated) TA = –40 to 85 °C - ±5 - % tsu(HSI14) HSI14 oscillator startup time 1(2) -2(2) µs IDDA(HSI14) HSI14 oscillator power consumption -100 - µA Table 35. LSI oscillator characteristics(1) 1. VDDA = 3.3 V, TA = –40 to 85 °C unless otherwise specified. Symbol Parameter Min Typ Max Unit fLSI Frequency 30 40 50 kHz tsu(LSI) (2) 2. Guaranteed by design, not tested in production. LSI oscillator startup time - - 85 µs IDDA(LSI) (2) LSI oscillator power consumption - 0.75 - µA |
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