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L6470PD 数据表(PDF) 12 Page - STMicroelectronics |
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L6470PD 数据表(HTML) 12 Page - STMicroelectronics |
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12 / 70 page ![]() Electrical characteristics L6470 12/70 Doc ID16737 Rev 5 tf Fall time (3) POW_SR = '00'; Iout = +1 A 90 ns POW_SR = '00'; Iout = -1 A 110 POW_SR = '11', Iout = ±1 A 110 POW_SR = '10', Iout = ±1 A 260 POW_SR = '01', Iload= ±1 A 375 SRout_r Output rising slew rate POW_SR = '00', Iout = +1 A 285 V/µs POW_SR = '00', Iout = -1 A 360 POW_SR = '11', Iout = ±1 A 285 POW_SR = '10', Iout = ±1 A 150 POW_SR = '01', Iout = ±1 A 95 SRout_f Output falling slew rate POW_SR = '00', Iout = +1 A 320 V/µs POW_SR = '00', Iout = -1 A 260 POW_SR = '11', Iout = ±1 A 260 POW_SR = '10', Iout = ±1 A 110 POW_SR = '01', Iout = ±1 A 75 Deadtime and blanking tDT Deadtime (1) POW_SR = '00' 250 ns POW_SR = '11', fOSC = 16 MHz 375 POW_SR = '10', fOSC = 16 MHz 625 POW_SR = '01', fOSC = 16 MHz 875 tblank Blanking time (1) POW_SR = '00' 250 ns POW_SR = '11', fOSC = 16 MHz 375 POW_SR = '10', fOSC = 16 MHz 625 POW_SR = '01', fOSC = 16 MHz 875 Source-drain diodes VSD,HS High-side diode forward ON voltage Iout = 1 A 1 1.1 V VSD,LS Low-side diode forward ON voltage Iout = 1 A 1 1.1 V trrHS High-side diode reverse recovery time Iout = 1 A 30 ns trrLS Low-side diode reverse recovery time Iout = 1 A 100 ns Table 5. Electrical characteristics (continued) Symbol Parameter Test condition Min. Typ. Max. Unit |
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