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PCF8563P/F4 数据表(PDF) 30 Page - NXP Semiconductors |
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PCF8563P/F4 数据表(HTML) 30 Page - NXP Semiconductors |
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30 / 50 page ![]() PCF8563 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 10 — 3 April 2012 30 of 50 NXP Semiconductors PCF8563 Real-time clock/calendar 11. Limiting values [1] Pass level; Human Body Model (HBM), according to Ref. 5 “JESD22-A114”. [2] Pass level; Charged-Device Model (CDM), according to Ref. 6 “JESD22-C101”. [3] Pass level; latch-up testing according to Ref. 7 “JESD78” at maximum ambient temperature (Tamb(max)). [4] According to the NXP store and transport requirements (see Ref. 9 “NX3-00092”) the devices have to be stored at a temperature of +8 C to +45 C and a humidity of 25 % to 75 %. For long term storage products deviant conditions are described in that document. Table 28. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDD supply voltage 0.5 +6.5 V IDD supply current 50 +50 mA VI input voltage on pins SCL, SDA, and OSCI 0.5 +6.5 V VO output voltage on pins CLKOUT and INT 0.5 +6.5 V II input current at any input 10 +10 mA IO output current at any output 10 +10 mA Ptot total power dissipation - 300 mW VESD electrostatic discharge voltage HBM HVSON10 (PCF8563BS/4) [1] - 3500 V DIP8 (PCF8563P/F4) [1] SO8 (PCF8563T/F4) [1] TSSOP8 (PCF8563TS/4) [1] SO8 (PCF8563T/5) [1] - 2000 V TSSOP8 (PCF8563TS/5) [1] CDM HVSON10 (PCF8563BS/4) [2] - 2000 V DIP8 (PCF8563P/F4) [2] - 500 V SO8 (PCF8563T/F4) [2] - 1000 V SO8 (PCF8563T/5) [2] - 1500 V TSSOP8 (PCF8563TS/4) [2] - 1500 V TSSOP8 (PCF8563TS/5) [2] - 1750 V Ilu latch-up current [3] -200 mA Tstg storage temperature [4] 65 +150 C Tamb ambient temperature operating device 40 +85 C |
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