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3.0-VLVCMOS 数据表(PDF) 7 Page - Altera Corporation

部件名 3.0-VLVCMOS
功能描述  This chapterdescribes the electric characteristics, switching characteristics,and I/O timing for Cyclone III devices. A glossary is also included for your reference
PDF  34 Pages
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制造商  ALTERA [Altera Corporation]
网页  http://www.altera.com
标志 ALTERA - Altera Corporation

3.0-VLVCMOS 数据表(HTML) 7 Page - Altera Corporation

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Chapter 1: Cyclone III Device Datasheet
1–7
Electrical Characteristics
July 2012
Altera Corporation
Cyclone III Device Handbook
Volume 2
The OCT resistance may vary with the variation of temperature and voltage after
calibration at device power-up. Use Table 1–8 and Equation 1–1 to determine the final
OCT resistance considering the variations after calibration at device power-up.
Table 1–8 lists the change percentage of the OCT resistance with voltage and
temperature.
Table 1–8. Cyclone III Devices OCT Variation After Calibration at Device Power-Up
Nominal Voltage
dR/dT (%/°C)
dR/dV (%/mV)
3.0
0.262
–0.026
2.5
0.234
–0.039
1.8
0.219
–0.086
1.5
0.199
–0.136
1.2
0.161
–0.288
Equation 1–1. (1), (2), (3), (4), (5), (6)
R
V = (V2 – V1) × 1000 × dR/dV
(7)
R
T = (T2 – T1) × dR/dT
(8)
For
R
x < 0; MFx = 1/ (|Rx|/100 + 1)
(9)
For Rx > 0; MFx = Rx/100 + 1 (10)
MF = MFV × MFT (11)
Rfinal = Rinitial × MF (12)
Notes to Equation 1–1:
(1) T2 is the final temperature.
(2) T1 is the initial temperature.
(3) MF is multiplication factor.
(4) Rfinal is final resistance.
(5) Rinitial is initial resistance.
(6) Subscript × refers to both V and T.
(7)
R
V is variation of resistance with voltage.
(8)
R
T is variation of resistance with temperature.
(9) dR/dT is the change percentage of resistance with temperature after calibration at device power-up.
(10) dR/dV is the change percentage of resistance with voltage after calibration at device power-up.
(11) V2 is final voltage.
(12) V1 is the initial voltage.



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