TLP708,TLP708F

2012-08-07

2

Schematic

Characteristics

Symbol

Rating

Unit

Forward Current

(Ta < 110

℃)

IF

25

mA

Forward Current Derating

(Ta ≥ 110

℃)

ΔIF/℃

-0.67

mA/

℃

Pulse Forward Current (Note 1)

(Ta < 110

℃)

IFP

50

mA

Pulse Forward Current Derating

(Ta ≥ 110

℃)

ΔIFP/℃

-1.34

mA/

℃

Reverse Voltage

VR

5

V

Input Power Dissipation

(Ta < 110

℃)

PD

40

mW

Input Power Dissipation Derating (Ta ≥ 110

℃)

ΔPD/℃

-1.0

mW/

℃

Output Current

(Ta ≤ 125

℃)

IO

25

mA

Output Voltage

VO

6

V

Supply Voltage

VCC

6

V

Output Power Dissipation

(Ta < 110

℃)

PO

80

mW

Output Power Dissipation

Derating

(Ta ≥ 110

℃)

ΔPO/℃

-2.0

mW/

℃

Operating Temperature Range

Topr

−40 to 125

℃

Storage Temperature Range

Tstg

−55 to 150

℃

Lead solder Temperature (10s)

Tsol

260

℃

Isolation voltage (Note 2)

BVS

5000

Vrms

Note: Using continuously under heavy loads (e.g. an application of high temperature/current/voltage and a significant change in

temperature, etc.) may cause this product to decrease in reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate,

etc)

Note 1: Pulse width ≤ 1ms, duty=50%

Note 2: R.H. ≤ 60%, Ta = 25

℃, AC 1 min

This device is regarded as a two-terminal device: pins 1, 2 and 3 are shorted together,

and pins 4, 5 and 6 are shorted together.

Input

Output

H

L

L

H

Note: A 0.1

μF bypass capacitor must be connected between pins 6 and 4.

Truth Table

GND

6

4

SHIELD

3－

1＋

5

VCC

VO

ICC

IF

IO