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STGWT40V60DF 数据表(PDF) 7 Page - STMicroelectronics

部件名 STGWT40V60DF
功能描述  Trench gate field-stop IGBT, V series
PDF  17 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGWT40V60DF 数据表(HTML) 7 Page - STMicroelectronics

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DocID024402 Rev 5
7/17
STGW40V60DF, STGWT40V60DF
Electrical characteristics
Figure 8. Collector current vs. switching
frequency
Figure 9. Forward bias safe operating area
Figure 10. Transfer characteristics
Figure 11. Diode VF vs. forward current
Figure 12. Normalized VGE(th) vs junction
temperature
Figure 13. Normalized V(BR)CES vs. junction
temperature
IC
40
30
10
0
1
(A)
10
50
60
f(kHz)
20
70
80
TC=80°C
TC=100°C
rectangular current shape,
(duty cycle=0.5, Vcc= 400V Rg=10Ω,
Vge=0/15V, Tj=175 °C)
90
AM17391v1
IC
100
10
0.1
0.01
1
(A)
10
VCE(V)
1
10μs
100μs
1ms
100
Single pulse, Tc=25°C
Tj<175°C, VGE=15V
AM17392v1
IC
80
60
20
0
6
(A)
8
VGE(V)
40
Tj=175°C
Tj=25°C
Tj=-40°C
10
140
120
100
160
AM17393v1
VF
1.6
0.8
10
(V)
20
IF(A)
1.2
Tj=175°C
Tj=25°C
Tj=-40°C
30
2.0
2.4
40
50
60
70
80
AM17394v1
VGE(th)
0.8
0.6
-50
(norm)
TC(°C)
0.7
0
0.9
1.0
50
100
150
VCE=VGE
IC=1mA
AM17395v1
V(BR)CES
1.1
0.9
-50
(norm)
TC(°C)
1.0
0
50
100
150
0.95
1.05
IC=2mA
AM17396v1



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