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STGWT40V60DF 数据表(PDF) 4 Page - STMicroelectronics

部件名 STGWT40V60DF
功能描述  Trench gate field-stop IGBT, V series
PDF  17 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGWT40V60DF 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STGW40V60DF, STGWT40V60DF
4/17
DocID024402 Rev 5
2
Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)CES
Collector-emitter
breakdown voltage
(V
GE
= 0)
I
C
= 2 mA
600
V
V
CE(sat)
Collector-emitter saturation
voltage
V
GE
= 15 V, I
C
= 40 A
1.8
2.3
V
V
GE
= 15 V, I
C
= 40 A
T
J
= 125 °C
2.15
V
GE
= 15 V, I
C
= 40 A
T
J
= 175 °C
2.35
V
F
Forward on-voltage
I
F
= 40 A
1.7
2.45
V
I
F
= 40 A, T
J
= 125 °C
1.4
V
I
F
= 40 A, T
J
= 175 °C
1.3
V
V
GE(th)
Gate threshold voltage
V
CE
= V
GE
, I
C
= 1 mA
5
6
7
V
I
CES
Collector cut-off current
(V
GE
= 0)
V
CE
= 600 V
25
μA
I
GES
Gate-emitter leakage
current (V
CE
= 0)
V
GE
= ± 20 V
250
nA
Table 5. Dynamic characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
C
ies
Input capacitance
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
-5400
-
pF
C
oes
Output capacitance
-
220
-
pF
C
res
Reverse transfer
capacitance
-180
-
pF
Q
g
Total gate charge
V
CC
= 480 V, I
C
= 40 A,
V
GE
= 15 V, see
Figure 29
-226
-
nC
Q
ge
Gate-emitter charge
-
38
-
nC
Q
gc
Gate-collector charge
-
95
-
nC



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