STGWT40V60DF datasheet(1/17 Pages) STMICROELECTRONICS

部件名	STGWT40V60DF

功能描述	Trench gate field-stop IGBT, V series

PDF	17 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

1 / 17 page

This is information on a product in full production.

October 2013

DocID024402 Rev 5

1/17

17

STGW40V60DF

STGWT40V60DF

Trench gate field-stop IGBT, V series

600 V, 40 A very high speed

Datasheet - production data

Figure 1. Internal schematic diagram

Features

• Maximum junction temperature: T

J

= 175 °C

• Tail-less switching off

• V

CE(sat)

= 1.8 V (typ.) @ I

C

= 40 A

• Tight parameters distribution

• Safe paralleling

• Low thermal resistance

• Very fast soft recovery antiparallel diode

Applications

• Photovoltaic inverters

• Uninterruptible power supply

• Welding

• Power factor correction

• Very high frequency converters

Description

This device is an IGBT developed using an

advanced proprietary trench gate field stop

structure. The device is part of the V series of

IGBTs, which represent an optimum compromise

between conduction and switching losses to

maximize the efficiency of very high frequency

converters. Furthermore, a positive V

CE(sat)

temperature coefficient and very tight parameter

distribution result in safer paralleling operation.

TO-247

TO-3P

1

2

3

TAB

1

2

3

C (2, TAB)

E (3)

G (1)

Table 1. Device summary

Order code

Marking

Package

Packaging

STGW40V60DF

GW40V60DF

TO-247

Tube

STGWT40V60DF

GWT40V60DF

TO-3P

Tube

www.st.com

类似零件编号 - STGWT40V60DF

制造商	部件名	数据表	功能描述
STMicroelectronics	STGWT40V60DF	1Mb / 21P	Trench gate field-stop IGBT, V series 600 V, 40 A very high speed 23-Apr-2014

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