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STGWT40V60DF 数据表(PDF) 9 Page - STMicroelectronics |
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STGWT40V60DF 数据表(HTML) 9 Page - STMicroelectronics |
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9 / 17 page ![]() DocID024402 Rev 5 9/17 STGW40V60DF, STGWT40V60DF Electrical characteristics Figure 20. Switching times vs. collector current Figure 21. Switching times vs. gate resistance Figure 22. Reverse recovery current vs. diode current slope Figure 23. Reverse recovery time vs. diode current slope Figure 24. Reverse recovery charge vs. diode current slope Figure 25. Reverse recovery energy vs. diode current slope t(ns) 0 IC(A) 20 40 10 60 80 VCC=400V, Tj=175°C, VGE=15V Rg=10Ω tdoff tdon 100 tr tf AM17403v1 t(ns) 0 Rg(Ω) 10 20 10 30 40 VCC=400V Tj=175°C VGE=15V IC=40A tdoff tdon 100 tr tf 1000 AM17404v1 Irm(A) 0 di/dt (A/μs) 500 1000 10 1500 2000 Vr=400V IF=40A Tj=175°C 20 30 40 50 60 70 80 90 0 2500 Tj=25°C AM17405v1 trr(μs) 0 di/dt (A/μs) 500 1000 1500 2000 Vr=400V IF=40A Tj=175°C 50 100 150 200 250 0 2500 Tj=25°C AM17406v1 Qrr(nC) 0 di/dt (A/μs) 500 1000 1500 2000 Vr=400V IF=40A Tj=175°C 500 1000 1500 2000 2500 0 2500 3000 Tj=25°C AM17407v1 Err(μJ) 0 di/dt (A/μs) 500 1000 1500 2000 Vr=400V IF=40A Tj=175°C 200 400 600 800 1000 0 2500 1200 1400 1600 Tj=25°C AM17408v1 |
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