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STGWT40V60DF 数据表(PDF) 9 Page - STMicroelectronics

部件名 STGWT40V60DF
功能描述  Trench gate field-stop IGBT, V series
PDF  17 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGWT40V60DF 数据表(HTML) 9 Page - STMicroelectronics

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DocID024402 Rev 5
9/17
STGW40V60DF, STGWT40V60DF
Electrical characteristics
Figure 20. Switching times vs. collector current
Figure 21. Switching times vs. gate resistance
Figure 22. Reverse recovery current vs. diode
current slope
Figure 23. Reverse recovery time vs. diode
current slope
Figure 24. Reverse recovery charge vs. diode
current slope
Figure 25. Reverse recovery energy vs. diode
current slope
t(ns)
0
IC(A)
20
40
10
60
80
VCC=400V,
Tj=175°C,
VGE=15V
Rg=10Ω
tdoff
tdon
100
tr
tf
AM17403v1
t(ns)
0
Rg(Ω)
10
20
10
30
40
VCC=400V
Tj=175°C
VGE=15V
IC=40A
tdoff
tdon
100
tr
tf
1000
AM17404v1
Irm(A)
0
di/dt (A/μs)
500
1000
10
1500 2000
Vr=400V
IF=40A
Tj=175°C
20
30
40
50
60
70
80
90
0
2500
Tj=25°C
AM17405v1
trr(μs)
0
di/dt (A/μs)
500
1000
1500 2000
Vr=400V
IF=40A
Tj=175°C
50
100
150
200
250
0
2500
Tj=25°C
AM17406v1
Qrr(nC)
0
di/dt (A/μs)
500
1000
1500 2000
Vr=400V
IF=40A
Tj=175°C
500
1000
1500
2000
2500
0
2500
3000
Tj=25°C
AM17407v1
Err(μJ)
0
di/dt (A/μs)
500
1000
1500 2000
Vr=400V
IF=40A
Tj=175°C
200
400
600
800
1000
0
2500
1200
1400
1600
Tj=25°C
AM17408v1



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