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STGWT40V60DF 数据表(PDF) 5 Page - STMicroelectronics |
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STGWT40V60DF 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 17 page ![]() DocID024402 Rev 5 5/17 STGW40V60DF, STGWT40V60DF Electrical characteristics Table 6. IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time V CE = 400 V, I C = 40 A, R G = 10 Ω, V GE = 15 V, see Figure 28 -52 - ns t r Current rise time - 17 - ns (di/dt) on Turn-on current slope - 1850 - A/μs t d ( off ) Turn-off delay time - 208 - ns t f Current fall time - 20 - ns E on (1) 1. Energy losses include reverse recovery of the diode. Turn-on switching losses - 456 - μJ E off (2) 2. Turn-off losses include also the tail of the collector current. Turn-off switching losses - 411 - μJ E ts Total switching losses - 867 - μJ t d(on) Turn-on delay time V CE = 400 V, I C = 40 A, R G = 10 Ω, V GE = 15 V, T J = 175 °C, see Figure 28 -52 - ns t r Current rise time - 21 - ns (di/dt) on Turn-on current slope - 1538 - A/μs t d ( off ) Turn-off delay time - 220 - ns t f Current fall time - 21 - ns E on (1) Turn-on switching losses - 1330 - μJ E off (2) Turn-off switching losses - 560 - μJ E ts Total switching losses - 1890 - μJ Table 7. Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t rr Reverse recovery time I F = 40 A, V R = 400 V, V GE = 15 V, di/dt=100 A/μs see Figure 28 -41 - ns Q rr Reverse recovery charge - 440 - nC I rrm Reverse recovery current - 21.6 - A dI rr/ /dt Peak rate of fall of reverse recovery current during t b -1363 - A/μs E rr Reverse recovery energy - 151 - μJ t rr Reverse recovery time I F = 40 A, V R = 400 V, V GE = 15 V, di/dt=100 A/μs T J = 175 °C, see Figure 28 - 109 - ns Q rr Reverse recovery charge - 2400 - nC I rrm Reverse recovery current - 44.4 - A dI rr/ /dt Peak rate of fall of reverse recovery current during t b - 670 - A/μs E rr Reverse recovery energy - 718 - μJ |
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