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STGWT40V60DF 数据表(PDF) 8 Page - STMicroelectronics

部件名 STGWT40V60DF
功能描述  Trench gate field-stop IGBT, V series
PDF  17 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGWT40V60DF 数据表(HTML) 8 Page - STMicroelectronics

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Electrical characteristics
STGW40V60DF, STGWT40V60DF
8/17
DocID024402 Rev 5
Figure 14. Capacitance variations
Figure 15. Gate charge vs. gate-emitter voltage
Figure 16. Switching losses vs. collector
current
Figure 17. Switching losses vs. gate resistance
Figure 18. Switching losses vs. junction
temperature
Figure 19. Switching losses vs. collector
emitter voltage
C(pF)
10
0.1
VCE(V)
1000
1
10
100
10000
Cies
Coes
Cres
AM17397v1
VGE(V)
0
0
Qg(nC)
50
100
2
150
200
250
4
6
8
10
12
14
16
AM17398v1
E(μJ)
0
0
IC(A)
800
20
40
400
1200
60
80
VCC=400V, VGE=15V
Rg=10Ω, Tj=175°C
1600
2000
2400
2800
Eon
Eoff
AM17399v1
E(μJ)
0
Rg(Ω)
700
10
20
300
1100
30
40
VCC=400V, VGE=15V
IC=40A, Tj=175°C
1500
1900
2300
Eon
Eoff
AM17400v1
E(μJ)
25
TJ(°C)
500
50
75
300
700
100
125
VCC=400V, VGE=15V
IC=40A, Rg=10Ω
900
1100
1300
Eon
Eoff
150
AM17401v1
E(μJ)
150
VCE(V)
600
200
250
200
1000
300
350
VGE=15V, Tj=175°C
IC=40A, Rg=10Ω
Eon
Eoff
400
800
1200
400
450
1400
1600
AM17402v1



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