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ADP2323ACPZ-R7 数据表(PDF) 21 Page - Analog Devices |
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ADP2323ACPZ-R7 数据表(HTML) 21 Page - Analog Devices |
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21 / 32 page ![]() Data Sheet ADP2323 Rev. A | Page 21 of 32 where: ΔVOUT_RIPPLE is the allowable output voltage ripple. RESR is the equivalent series resistance of the output capacitor. Select the largest output capacitance given by COUT_UV, COUT_OV, and COUT_RIPPLE to meet both load transient and output ripple performance. The selected output capacitor voltage rating must be greater than the output voltage. The minimum rms current rating of the output capacitor is determined by the following equation: 12 _ L rms C I I OUT ∆ = LOW-SIDE POWER DEVICE SELECTION The ADP2323 has integrated low-side MOSFET drivers, which can drive the low-side N-channel MOSFETs (NFETs). The selection of the low-side N-channel MOSFET affects the dc-to- dc regulator performance. The selected MOSFET must meet the following requirements: • Drain source voltage (VDS) must be higher than 1.2 × VIN. • Drain current (ID) must be greater than the 1.2 × ILIMIT_MAX, where ILIMIT_MAX is the selected maximum current-limit threshold. The ADP2323 low-side gate drive voltage is 5 V. Make sure that the selected MOSFET can be fully turned on at 5 V. Total gate charge (Qg at 5 V) must be less than 30 nC. Lower Qg characteristics constitute higher efficiency. When the high-side MOSFET is turned off, the low-side MOSFET carries the inductor current. For low duty cycle applications, the low-side MOSFET carries the current for most of the period. To achieve higher efficiency, it is important to select a low on-resistance MOSFET. The power conduction loss for the low-side MOSFET can be calculated using the following equation: PFET_LOW = IOUT2 × RDSON × (1 − D) where RDSON is the on resistance of the low-side MOSFET. Make sure that the MOSFET can handle the thermal dissipation due to the power loss. In some cases, efficiency is not critical for the system; therefore, the diode can be selected as the low-side power device. The average current of the diode can be calculated using the following equation: IDIODE(AVG) = (1 − D) × IOUT The reverse breakdown voltage rating of the diode must be greater than the input voltage with an appropriate margin to allow for ringing, which may be present at the SWx node. A Schottky diode is recommended because it has low forward voltage drop and fast switching speed. If a diode is used for the low-side device, the ADP2323 must enable the PFM mode by connecting the MODE pin to ground. Table 10. Recommended MOSFETs Vendor Part No. V DS I D R DSON Qg Fairchild FDS8880 30 V 10.7 A 12 mΩ 12 nC Fairchild FDMS7578 25 V 14 A 8 mΩ 8 nC Fairchild FDS6898A 20 V 9.4 A 14 mΩ 16 nC Vishay Si4804CDY 30 V 7.9 A 27 mΩ 7 nC Vishay SiA430DJ 20 V 10.8 A 18.5 mΩ 5.3 nC AOS AON7402 30 V 39 A 15 mΩ 7.1 nC AOS AO4884L 40 V 10 A 16 mΩ 13.6 nC PROGRAMMING UVLO INPUT The precision enable input can be used to program the UVLO threshold and hysteresis of the input voltage as shown in Figure 46. ENx 1.2V EN CMP 4µA 1µA PVINx RTOP_EN RBOT_EN Figure 46. Programming UVLO Input Use the following equation to calculate RTOP_EN and RBOT_EN: μA 1 V 2 . 1 μA 5 V 1 . 1 V 2 . 1 V 1 . 1 _ _ _ × − × × − × = FALLING IN RISING IN EN TOP V V R V 2 . 1 μ 5 V 2 . 1 _ _ _ _ − Α × − × = EN TOP RISING IN EN TOP EN BOT R V R R where: VIN_RISING is the VIN rising threshold. VIN_FALLING is the VIN falling threshold. COMPENSATION COMPONENTS DESIGN For peak current-mode control, the power stage can be simplified as a voltage controlled current source supplying current to the output capacitor and load resistor. It is composed of one domain pole and a zero contributed by the output capacitor ESR. The control-to-output transfer function is shown in the following equations: × π × + × π × + × × = = p z VI COMP OUT vd f s f s R A s V s V s G 2 1 2 1 ) ( ) ( ) ( OUT ESR z C R f × × π × = 2 1 ( ) OUT ESR p C R R f × + × π × = 2 1 where: AVI = 5 A/V R is the load resistance. COUT is the output capacitance. |
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