CD00001237 datasheet(77/105 Pages) STMICROELECTRONICS

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11.6 MEMORY CHARACTERISTICS

Subject to general operating conditions for VDD, fOSC, and TA unless otherwise specified.

11.6.1 RAM and Hardware Registers

11.6.2 EPROM Program Memory

Figure 55. EPROM Retention Time vs. Temperature

Notes:

1. Minimum VDD supply voltage without losing data stored in RAM (in STOP mode or under RESET) or in hardware reg-

isters (only in STOP mode). Guaranteed by construction, not tested in production.

2. Data based on reliability test results and monitored in production. For OTP devices, data retention and programmability

must be guaranteed by a screening procedure. Refer to Application Note AN886.

3. The data retention time increases when the TA decreases, see Figure 55.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRM

Data retention1)

0.7

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

tret

Data retention 2)

TA=+55°C

years

-40 -30 -20 -10

90 100 110 120

Temperature [°C]

0.1

100

1000

10000

100000

Retention time [Years]

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