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STM32F103CBU6 数据表(PDF) 56 Page - STMicroelectronics |
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STM32F103CBU6 数据表(HTML) 56 Page - STMicroelectronics |
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56 / 105 page  Electrical characteristics STM32F103x8, STM32F103xB 56/105 DocID13587 Rev 16 Low-speed internal (LSI) RC oscillator Wakeup time from low-power mode The wakeup times given in Table 26 is measured on a wakeup phase with a 8-MHz HSI RC oscillator. The clock source used to wake up the device depends from the current operating mode: Stop or Standby mode: the clock source is the RC oscillator Sleep mode: the clock source is the clock that was set before entering Sleep mode. All timings are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 9. Table 25. LSI oscillator characteristics (1) 1. VDD = 3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Min Typ Max Unit fLSI(2) 2. Based on characterization, not tested in production. Frequency 30 40 60 kHz tsu(LSI)(3) 3. Guaranteed by design, not tested in production. LSI oscillator startup time - - 85 µs IDD(LSI)(3) LSI oscillator power consumption - 0.65 1.2 µA |
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