STM32F217VG datasheet(63/173 Pages) STMICROELECTRONICS

63 / 173 page

STM32F21xxx

Electrical characteristics

Doc ID 17050 Rev 8

63/173

VCAP1

Internal core voltage to be supplied

externally in REGOFF mode

1.1

1.3

VCAP2

Power dissipation at TA = 85 °C for

suffix 6 or TA = 105 °C for suffix 7

(3)

LQFP64

444

LQFP100

434

LQFP144

500

LQFP176

526

UFBGA176

513

Ambient temperature for 6 suffix

version

Maximum power dissipation

–40

°C

Low power dissipation(4)

–40

105

Ambient temperature for 7 suffix

version

Maximum power dissipation

–40

105

°C

Low power dissipation(4)

–40

125

Junction temperature range

6 suffix version

–40

105

°C

7 suffix version

–40

125

When the ADC is used, refer to Table 63: ADC characteristics.

It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV between VDD and

VDDA can be tolerated during power-up and power-down operation.

If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax.

In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax.

Table 11.

General operating conditions (continued)

Symbol

Parameter

Conditions

Min

Max

Unit

Table 12.

Limitations depending on the operating power supply range

Operating

power

supply

range

ADC

operation

Maximum

Flash

memory

access

frequency

(fFlashmax)

Number of wait

states at

maximum CPU

frequency

(fCPUmax=

120 MHz)(1)

I/O operation

FSMC_CLK

frequency for

synchronous

accesses

Possible

Flash

memory

operations

VDD =1.8 to

2.1 V

Conversion

time up to

1 Msps

16 MHz with

no Flash

memory wait

state

7(2)

– Degraded

speed

performance

– No I/O

compensation

up to 30 MHz

8-bit erase

and program

operations

only

VDD = 2.1 to

2.4 V

Conversion

time up to

1 Msps

18 MHz with

no Flash

memory wait

state

6(2)

– Degraded

speed

performance

– No I/O

compensation

up to 30 MHz

16-bit erase

and program

operations

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