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STM32F217VG 数据表(PDF) 93 Page - STMicroelectronics

部件名 STM32F217VG
功能描述  ARM-based 32-bit MCU, 150DMIPs, up to 1 MB Flash/1284KB RAM
PDF  173 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32F217VG 数据表(HTML) 93 Page - STMicroelectronics

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STM32F21xxx
Electrical characteristics
Doc ID 17050 Rev 8
93/173
5.3.14
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
A supply overvoltage is applied to each power supply pin
A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD 78A IC latch-up standard.
Table 39.
EMI characteristics
Symbol
Parameter
Conditions
Monitored
frequency band
Max vs.
[fHSE/fCPU]
Unit
8/120 MHz
SEMI
Peak level
VDD = 3.3 V, TA = 25 °C, LQFP176
package, conforming to SAE J1752/3
EEMBC, code running with ART
enabled
0.1 to 30 MHz
21
dBµV
30 to 130 MHz
28
130 MHz to 1GHz
31
SAE EMI Level
4
-
VDD = 3.3 V, TA = 25 °C, LQFP176
package, conforming to SAE J1752/3
EEMBC, code running with ART
enabled, PLL spread spectrum
enabled
0.1 to 30 MHz
21
dBµV
30 to 130 MHz
15
130 MHz to 1GHz
14
SAE EMI level
3.5
-
Table 40.
ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class
Maximum
value(1)
Unit
VESD(HBM)
Electrostatic discharge
voltage (human body
model)
TA = +25 °C conforming to JESD22-A114
2
2000(2)
V
VESD(CDM)
Electrostatic discharge
voltage (charge device
model)
TA = +25 °C conforming to JESD22-C101
II
500
1.
Based on characterization results, not tested in production.
2.
On VBAT pin, VESD(HBM) is limited to 1000 V.



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