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STM32F217VG 数据表(PDF) 97 Page - STMicroelectronics

部件名 STM32F217VG
功能描述  ARM-based 32-bit MCU, 150DMIPs, up to 1 MB Flash/1284KB RAM
PDF  173 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32F217VG 数据表(HTML) 97 Page - STMicroelectronics

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STM32F21xxx
Electrical characteristics
Doc ID 17050 Rev 8
97/173
Input/output AC characteristics
The definition and values of input/output AC characteristics are given in Figure 35 and
Table 45, respectively.
Unless otherwise specified, the parameters given in Table 45 are derived from tests
performed under the ambient temperature and VDD supply voltage conditions summarized
in Table 11.
4.
Based on characterization data, not tested in production.
Table 45.
I/O AC characteristics(1)(2)
OSPEEDRy
[1:0] bit
value(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
00
fmax(IO)out Maximum frequency
(3)
CL = 50 pF, VDD > 2.70 V
-
-
2
MHz
CL = 50 pF, VDD > 1.8 V
-
-
2
CL = 10 pF, VDD > 2.70 V
-
-
TBD
CL = 10 pF, VDD > 1.8 V
-
-
TBD
tf(IO)out
Output high to low level fall
time
CL = 50 pF, VDD = 1.8 V to
3.6 V
--
TBD
ns
tr(IO)out
Output low to high level rise
time
--
TBD
01
fmax(IO)out Maximum frequency
(3)
CL = 50 pF, VDD > 2.70 V
-
-
25
MHz
CL = 50 pF, VDD > 1.8 V
-
-
12.5(4)
CL = 10 pF, VDD > 2.70 V
-
-
50(4)
CL = 10 pF, VDD > 1.8 V
-
-
TBD
tf(IO)out
Output high to low level fall
time
CL = 50 pF, VDD < 2.7 V
-
-
TBD
ns
CL = 10 pF, VDD > 2.7 V
-
-
TBD
tr(IO)out
Output low to high level rise
time
CL = 50 pF, VDD < 2.7 V
-
-
TBD
CL = 10 pF, VDD > 2.7 V
-
-
TBD
10
fmax(IO)out Maximum frequency
(3)
CL = 40 pF, VDD > 2.70 V
-
-
50(4)
MHz
CL = 40 pF, VDD > 1.8 V
-
-
25
CL = 10 pF, VDD > 2.70 V
-
-
100(4)
CL = 10 pF, VDD > 1.8 V
-
-
TBD
tf(IO)out
Output high to low level fall
time
CL = 50 pF, 2.4 < VDD < 2.7 V
-
-
TBD
ns
CL = 10 pF, VDD > 2.7 V
-
-
TBD
tr(IO)out
Output low to high level rise
time
CL = 50 pF, 2.4 < VDD < 2.7 V
-
-
TBD
CL = 10 pF, VDD > 2.7 V
-
-
TBD



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