STM32F217VG datasheet(85/173 Pages) STMICROELECTRONICS

85 / 173 page

STM32F21xxx

Electrical characteristics

Doc ID 17050 Rev 8

85/173

Low-speed internal (LSI) RC oscillator

Figure 32.

ACCLSI versus temperature

5.3.10

PLL characteristics

The parameters given in Table 31 and Table 32 are derived from tests performed under

temperature and VDD supply voltage conditions summarized in Table 11.

Table 30.

LSI oscillator characteristics (1)

VDD = 3 V, TA = –40 to 105 °C unless otherwise specified.

Symbol

Parameter

Min

Typ

Max

Unit

fLSI

(2)

Based on characterization, not tested in production.

Frequency

kHz

tsu(LSI)

(3)

Guaranteed by design, not tested in production.

LSI oscillator startup time

µs

IDD(LSI)

(3)

LSI oscillator power consumption

0.4

0.6

µA

MS19013V1

-40

-30

-20

-10

-45

-35

-25

-15

-5

152535455565758595

105

Temperat ure (°C)

max

avg

min

Table 31.

Main PLL characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fPLL_IN

PLL input clock(1)

0.95

(2)

12.10(2)

MHz

fPLL_OUT

PLL multiplier output clock

120

MHz

fPLL48_OUT

48 MHz PLL multiplier output

clock

MHz

fVCO_OUT

PLL VCO output

192

432

MHz

STM32F217VG 数据表(PDF) 85 Page - STMicroelectronics

STM32F217VG 数据表(HTML) 85 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

数据表下载