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AS8515 数据表(PDF) 21 Page - ams AG |
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AS8515 数据表(HTML) 21 Page - ams AG |
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21 / 65 page ![]() www.ams.com Revision 0.7 21 - 65 AS8515 Datasheet - AS8515 To p Die Overview Figure 14. EN Connection for Permanent Normal Mode 7.16 Top Die Block Specifications This section provides specification of design related key parameters. 7.16.1 Voltage Attenuator Table 18. Voltage Attenuator Symbol Parameter Condition Min Typ Max Unit RDIV Division ratio 21 V/V VSENSE Input voltage range/ Battery voltage range 4.5 12 18 V εp,RDIV Ratio error At room temperature, VSENSE=12V ±1 % εdt1,RDIV Ratio drift (with reference to Temperature) Temperature: -25 to +65º @VSENSE=12V Maximum values will be added after device evaluation (to be guaranteed by evaluation) ±0.05 % εdt2,RDIV Temperature: -40 to +125º @VSENSE=12V Maximum values will be added after device evaluation (to be guaranteed by evaluation) ±0.2 εdv1,RDIV Ratio drift (with reference to VSENSE) VSENSE: 11V to 13V @Temperature=27º Maximum values will be added after device evaluation (to be guaranteed by evaluation) ±0.05 % εdv2,RDIV VSENSE: 6V to 18V @Temperature=27º Maximum values will be added after device evaluation (to be guaranteed by evaluation) ±0.2 + + VCC RESET Tx Rx EN VSUP LIN VSS MCU +3.3V CLOAD VBAT CIN |
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