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ACT8810 数据表(PDF) 41 Page - Active-Semi, Inc

部件名 ACT8810
功能描述  Eight Channel ActivePathTM Power Management IC
PDF  54 Pages
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制造商  ACTIVE-SEMI [Active-Semi, Inc]
网页  http://www.active-semi.com
标志 ACTIVE-SEMI - Active-Semi, Inc

ACT8810 数据表(HTML) 41 Page - Active-Semi, Inc

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ActivePath
TM CHARGER
ACT8810
Rev 9, 15-Nov-12
Innovative Power
TM
- 41 -
www.active-semi.com
Copyright © 2012 Active-Semi, Inc.
ActivePMU
TM and ActivePathTM are trademarks of Active-Semi.
I
2CTM is a trademark of NXP.
ELECTRICAL CHARACTERISTICS CONT’D
(VCHG_IN = 5V, TA = 25°C, unless otherwise specified.)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
CHARGER
BAT Reverse Leakage Current
VCHG_IN = 0V, VBAT = 4.2V, IVSYS = 0mA
5
µA
BAT to VSYS On-Resistance
80
mΩ
ISET Pin Voltage
Fast Charge
1.02
V
Precondition
0.12
Charge Termination Voltage
TA = -20°C to 70°C
4.179
4.2
4.221
V
TA = -40°C to 85°C
4.170
4.230
Charge Current
VBAT = 3.5V,
RISET = 1.2kΩ
ACIN = VSYS, CHGLEV = VSYS -10%
ISET1
+10%
mA
ACIN = VSYS, CHGLEV = GA
-16%
50%ISET +16%
ACIN = GA, CHGLEV = VSYS
-10%
Smallest
(450mA
or ISET)
+10%
ACIN = GA, CHGLEV = GA
-10%
Smallest
(90mA or
ISET)
+10%
Precondition Charge Current
VBAT = 2.5V,
RISET = 1.2kΩ
ACIN = VSYS, CHGLEV = VSYS
12%ISET
mA
ACIN = VSYS, CHGLEV = GA
12%ISET
ACIN = GA, CHGLEV = VSYS
12%ISET
ACIN = GA, CHGLEV = GA
Smallest
(90mA or
12%ISET)
Precondition Threshold Voltage
VBAT Voltage Rising
2.75
2.85
2.95
V
Precondition Threshold Hysteresis VBAT Voltage Falling
100
mV
End-of-Charge Current Threshold
VBAT = 4.2V,
RISET = 1.2kΩ
ACIN = VSYS, CHGLEV = VSYS
10%ISET
mA
ACIN = VSYS, CHGLEV = GA
10%ISET
ACIN = GA, CHGLEV = VSYS
5%ISET
ACIN = GA, CHGLEV = GA
5%ISET
Charge Restart Threshold
VSET - VBAT, VBAT Falling
150
170
190
mV
Fast Charge Safety Timer
TNORMAL
RBTR = 62 kΩ
3
hr
Precondition Safety Timer
TPRECONDITION RBTR = 62 kΩ
12
hr
THERMAL REGULATION
Thermal Regulation Threshold
100
145
°C
: ISET (mA) = KISET × 1V/(RISET (kΩ) +0.031) where KISET = 628
2
: TPRECONDITION = TNORMAL / 3 (typ)



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