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ACT8810 数据表(PDF) 7 Page - Active-Semi, Inc |
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ACT8810 数据表(HTML) 7 Page - Active-Semi, Inc |
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7 / 54 page ![]() ACT8810 Rev 9, 15-Nov-12 Innovative Power TM - 7 - www.active-semi.com Copyright © 2012 Active-Semi, Inc. ActivePMU TM and ActivePathTM are trademarks of Active-Semi. I 2CTM is a trademark of NXP. ABSOLUTE MAXIMUM RATINGS PARAMETER VALUE UNIT CHG_IN to GA t < 1ms and duty cycle <1% Steady State -0.3 to +18 -0.3 to +14 V V VP1 to GP1, VP2 to GP2, VP3 to GP3 -0.3 to +6 V BAT, VSYS, INL to GA -0.3 to +6 V SW1, OUT1 to GP1 -0.3 to (VVP1 +0.3) V SW2, OUT2 to GP2 -0.3 to (VVP2 +0.3) V SW3, OUT3 to GP3 -0.3 to (VVP3 +0.3) V Operating Ambient Temperature -40 to 85 °C Maximum Junction Temperature 125 °C Maximum Power Dissipation TQFN55-40 (Thermal Resistance θJA = 30 oC/W) 2.7 W Storage Temperature -65 to 150 °C Lead Temperature (Soldering, 10 sec) 300 °C ON1, ON2, ON3, ISET, ACIN, VSEL, DCCC, CHGLEV, TH, SCL, SDA, REFBP, nIRQ, nRSTO, nSTAT0, nSTAT1, BTR, nPBIN to GA -0.3 to +6 V OUT4, OUT5, OUT6 to GA -0.3 to (VINL +0.3) V : Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating conditions for long periods may affect device reliability. |
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