ACT8810 datasheet(43/54 Pages) ACTIVE-SEMI

43 / 54 page

ActivePath

TM CHARGER

ACT8810

Rev 9, 15-Nov-12

Innovative Power

- 43 -

www.active-semi.com

ActivePMU

TM and ActivePathTM are trademarks of Active-Semi.

2CTM is a trademark of NXP.

TYPICAL PERFORMANCE CHARACTERISTICS CONT’D

VAC Applied, CHGLEV = LOW

VAC Applied, CHGLEV = HIGH

VAC Removed, CHGLEV = LOW

VAC Removed, CHGLEV = HIGH

CH1

CH2

CH3

CH4

CH1

CH2

CH3

CH4

CH1

CH2

CH3

CH4

CH1

CH2

CH3

CH4

CH1: VUSB, 2.00V/div

CH2: VCHG_IN, 2.00V/div

CH3: IBAT, 500mA/div

CH4: VVAC, 2.00V/div

TIME: 400µs/div

CH1: VUSB, 2.00V/div

CH2: VCHG_IN, 2.00V/div

CH3: IBAT, 500mA/div

CH4: VVAC, 2.00V/div

TIME: 400µs/div

CH1: VUSB, 2.00V/div

CH2: VCHG_IN, 2.00V/div

CH3: IBAT, 500mA/div

CH4: VVAC, 2.00V/div

TIME: 400µs/div

CH1: VUSB, 2.00V/div

CH2: VCHG_IN, 2.00V/div

CH3: IBAT, 500mA/div

CH4: VVAC, 2.00V/div

TIME: 400µs/div

100mA

450mA

100mA

450mA

Battery Voltage (V)

Battery Leakage Current vs. Battery Voltage

No CHG_IN

CHGLEV = 0

(VCHG_IN = 5V, RDCCC = 20k, RISET = 680Ω, TA = 25°C, unless otherwise specified.)

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