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MSP430F5259 数据表(PDF) 73 Page - Texas Instruments |
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MSP430F5259 数据表(HTML) 73 Page - Texas Instruments |
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73 / 107 page  MSP430F5259, MSP430F5258, MSP430F5257, MSP430F5256 MSP430F5255, MSP430F5254, MSP430F5253, MSP430F5252 www.ti.com SLAS903A – MAY 2013 – REVISED JULY 2013 Flash Memory over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) TEST PARAMETER MIN TYP MAX UNIT CONDITIONS DVCC(PGM/ERASE) Program and erase supply voltage 1.8 3.6 V IPGM Average supply current from DVCC during program 3 5 mA IERASE Average supply current from DVCC during erase 6 11 mA Average supply current from DVCC during mass erase or bank IMERASE, IBANK 6 11 mA erase tCPT Cumulative program time See (1) 16 ms Program and erase endurance 104 105 cycles tRetention Data retention duration TJ = 25°C 100 years tWord Word or byte program time See (2) 64 85 µs tBlock, 0 Block program time for first byte or word See (2) 49 65 µs Block program time for each additional byte or word, except for last tBlock, 1–(N–1) See (2) 37 49 µs byte or word tBlock, N Block program time for last byte or word See (2) 55 73 µs Erase time for segment, mass erase, and bank erase when tErase See (2) 23 32 ms available MCLK frequency in marginal read mode fMCLK,MGR 0 1 MHz (FCTL4.MGR0 = 1 or FCTL4. MGR1 = 1) (1) The cumulative program time must not be exceeded when writing to a 128-byte flash block. This parameter applies to all programming methods: individual word or byte write mode and block write mode. (2) These values are hardwired into the flash controller's state machine. JTAG and Spy-Bi-Wire Interface over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) PARAMETER VCC VIO MIN TYP MAX UNIT fSBW Spy-Bi-Wire input frequency 2.2 V, 3 V 1.62 V to 1.98 V 0 20 MHz tSBW,Low Spy-Bi-Wire low clock pulse length 2.2 V, 3 V 1.62 V to 1.98 V 0.025 15 µs Spy-Bi-Wire enable time (TEST high to acceptance of first tSBW, En 1.62 V to 1.98 V 1 µs clock edge) tSBW,Rst Spy-Bi-Wire return to normal operation time 2.2 V, 3 V 1.62 V to 1.98 V 15 100 µs 2.2 V 1.62 V to 1.98 V 0 5 MHz fTCK TCK input frequency for 4-wire JTAG 3 V 1.62 V to 1.98 V 0 10 MHz Rinternal Internal pulldown resistance on TEST 2.2 V, 3 V 1.62 V to 1.98 V 45 60 80 k Ω Copyright © 2013, Texas Instruments Incorporated Submit Documentation Feedback 73 |
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