a

Low Noise, Matched

Dual Monolithic Transistor

MAT02

FEATURES

Low Offset Voltage: 50

V max

Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/

√Hz max

A

0.3

Low Offset Voltage Drift: 0.1

V/ C max

Improved Direct Replacement for LM194/394

NOTE

Substrate is connected to case on TO-78 package.

Substrate is normally connected to the most negative

circuit potential, but can be floated.

PIN CONNECTION

TO-78

(H Suffix)

PRODUCT DESCRIPTION

The design of the MAT02 series of NPN dual monolithic tran-

Precision Monolithics’ exclusive Silicon Nitride “Triple-

Passivation” process stabilizes the critical device parameters

over wide ranges of temperature and elapsed time. Also, the high

range of collector current. Exceptional characteristics of the

MAT02 include offset voltage of 50

µV max (A/E grades) and

150

µV max F grade. Device performance is specified over the

full military temperature range as well as at 25

°C.

Input protection diodes are provided across the emitter-base

junctions to prevent degradation of the device characteristics

due to reverse-biased emitter current. The substrate is clamped

to the most negative emitter by the parasitic isolation junction

created by the protection diodes. This results in complete isola-

tion between the transistors.

Information furnished by Analog Devices is believed to be accurate and

reliable. However, no responsibility is assumed by Analog Devices for its

use, nor for any infringements of patents or other rights of third parties that

may result from its use. No license is granted by implication or otherwise

under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781/329-4700

www.analog.com

Fax: 781/326-8703

© Analog Devices, Inc., 2002

REV. E

The MAT02 should be used in any application where low

noise is a priority. The MAT02 can be used as an input

stage to make an amplifier with noise voltage of less than

1.0 nV/

√Hz at 100 Hz. Other applications, such as log/antilog

circuits, may use the excellent logging conformity of the

MAT02. Typical bulk resistance is only 0.3

Ω to 0.4 Ω. The

MAT02 electrical characteristics approach those of an ideal

transistor when operated over a collector current range of 1

µA to 10 mA. For applications requiring multiple devices

see MAT04 Quad Matched Transistor data sheet.