MAT02_15 datasheet(3/12 Pages) AD

3 / 12 page

ELECTRICAL CHARACTERISTICS

MAT02E

MAT02F

Parameter

Symbol

Conditions

Min

Typ

Max

Min

Typ

Max

Unit

Offset Voltage

VOS

VCB = 0

220

µV

µA ≤ I

≤ 1 mA1

Average Offset

Voltage Drift

TCVOS

µA ≤ IC ≤ 1 mA, 0 ≤ VCB ≤ VMAX2

0.08 0.3

0.08 1

µV/°C

VOS Trimmed to Zero

0.03 0.1

0.03 0.3

Input Offset Current

IOS

IC = 10

µA8

Input Offset

Current Drift

TCIOS

IC = 10

µA4

150

pA/

°C

Input Bias Current

IC = 10

µA45

Current Gain

hFE

IC = 1 mA

325

300

IC = 100

µA

275

250

IC = 10

µA

225

200

IC = 1

µA

200

150

Collector-Base

ICBO

VCB = VMAX

Leakage Current

Collector-Emitter

ICES

VCE = VMAX, VBE = 0

Leakage Current

Collector-Collector

ICC

VCC = VMAX

Leakage Current

NOTES

1Measured at I

C = 10

µA and guaranteed by design over the specified range of IC.

2Guaranteed by V

OS test (TCVOS

≅

for VOS

VBE) T = 298K for TA = 25

°C.

3The initial zero offset voltage is established by adjusting the ratio of I

C1 to IC2 at TA = 25

°C. This ratio must be held to 0.003% over the entire temperature range.

Measurements are taken at the temperature extremes and 25

°C.

4Guaranteed by design.

5Current gain is guaranteed with Collector-Base Voltage (V

CB) swept from 0 V to VMAX at the indicated collector current.

Specifications subject to change without notice.

(VCB = 15 V, –25 C

≤ TA ≤ +85 C, unless otherwise noted.)

MAT02

–3–

REV. E

WARNING!

ESD SENSITIVE DEVICE

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily

accumulate on the human body and test equipment and can discharge without detection.

Although the MAT02 features proprietary ESD protection circuitry, permanent damage may

occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD

precautions are recommended to avoid performance degradation or loss of functionality.

ABSOLUTE MAXIMUM RATINGS

Collector-Base Voltage (BVCBO) . . . . . . . . . . . . . . . . . . . . 40 V

Collector-Emitter Voltage (BVCEO) . . . . . . . . . . . . . . . . . . 40 V

Collector-Collector Voltage (BVCC) . . . . . . . . . . . . . . . . . . 40 V

Emitter-Emitter Voltage (BVEE) . . . . . . . . . . . . . . . . . . . . 40 V

Collector Current (IC) . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA

Emitter Current (IE) . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA

Total Power Dissipation

Case Temperature

≤ 40°C2 . . . . . . . . . . . . . . . . . . . . . 1.8 W

Ambient Temperature

≤ 70°C3 . . . . . . . . . . . . . . . . 500 mW

Operating Temperature Range

MAT02E, F . . . . . . . . . . . . . . . . . . . . . . . . . –25

°C to +85°C

ORDERING GUIDE

VOS max

Temperature

Package

Model

(TA = 25 C)

Range

Option

MAT02EH

µV

–25

°C to +85°C

TO-78

MAT02FH

150

µV

–25

°C to +85°C

TO-78

Operating Junction Temperature . . . . . . . . . . –55

°C to +150°C

Storage Temperature . . . . . . . . . . . . . . . . . . . –65

°C to +150°C

Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . . . 300

°C

Junction Temperature . . . . . . . . . . . . . . . . . . –65

°C to +150°C

NOTES

1Absolute maximum ratings apply to both DICE and packaged devices.

2Rating applies to applications using heat sinking to control case temperature.

Derate linearly at 16.4 mW/

°C for case temperature above 40°C.

3Rating applies to applications not using a heat sinking; devices in free air only.

Derate linearly at 6.3 mW/

°C for ambient temperature above 70°C.

MAT02 数据表(PDF) 3 Page - Analog Devices

MAT02 数据表(HTML) 3 Page - Analog Devices

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

数据表下载

链接网址

MAT02 数据表(PDF) 3 Page - Analog Devices

MAT02 数据表(HTML) 3 Page - Analog Devices

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

数据表 下载

链接网址

数据表下载