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MAT02 数据表(PDF) 2 Page - Analog Devices

部件名 MAT02
功能描述  Low Noise, Matched Dual Monolithic Transistor
PDF  12 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

MAT02 数据表(HTML) 2 Page - Analog Devices

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REV. E
–2–
ELECTRICAL CHARACTERISTICS
MAT02E
MAT02F
Parameter
Symbol
Conditions
Min
Typ
Max
Min
Typ
Max
Unit
Current Gain
hFE
IC = 1 mA
1
500
605
400
605
IC = 100
µA
500
590
400
590
IC = 10
µA
400
550
300
550
IC = 1
µA
300
485
200
485
Current Gain Match
∆h
FE
10
µA ≤ I
C
≤ 1 mA2
0.5
2
0.5
4
%
Offset Voltage
VOS
VCB = 0, 1
µA ≤ IC ≤ 1 mA3
10
50
80
150
µV
Offset Voltage
∆VOS/∆VCB 0 ≤ VCB ≤ VMAX4
10
25
10
50
µV
Change vs. VCB
1
µA ≤ I
C
≤ 1 mA3
10
25
10
50
µV
Offset Voltage Change
∆VOS/∆IC
VCB = 0 V
5
25
5
50
µV
vs. Collector Current
1
µA ≤ IC ≤ 1 mA3
525
5
50
µV
Offset Current
Change vs. VCB
∆IOS/∆VCB
0
≤ VCB ≤ VMAX
30
70
30
70
pA/V
Bulk Resistance
rBE
10
µA ≤ IC ≤ 10 mA5
0.3
0.5
0.3
0.5
Ω
Collector-Base
Leakage Current
ICBO
VCB = VMAX
25
200
25
400
pA
Collector-Collector
Leakage Current
ICC
VCC = VMAX
5, 6
35
200
35
400
pA
Collector-Emitter
VCE = VMAX
5, 6
Leakage Current
ICES
VBE = 0
35
200
35
400
pA
Noise Voltage Density
en
IC = 1 mA, VCB = 0
7
fO = 10 Hz
1.6
2
1.6
3
nV/
√Hz
fO = 100 Hz
0.9
1
0.9
2
nV/
√Hz
fO = 1 kHz
0.85
1
0.85
2
nV/
√Hz
fO = 10 kHz
0.85
1
0.85
2
nV/
√Hz
Collector Saturation
Voltage
VCE(SAT)
IC = 1 mA, IB = 100
µA0.05
0.1
0.05
0.2
V
Input Bias Current
IB
IC = 10
µA25
34
nA
Input Offset Current
IOS
IC = 10
µA
0.6
1.3
nA
Breakdown Voltage
BVCEO
40
40
V
Gain-Bandwidth Product
fT
IC = 10 mA, VCE = 10 V
200
200
MHz
Output Capacitance
COB
VCB = 15 V, IE = 0
23
23
pF
Collector-Collector
Capacitance
CCC
VCC = 0
35
35
pF
NOTES
1Current gain is guaranteed with Collector-Base Voltage (V
CB) swept from 0 to VMAX at the indicated collector currents.
2Current gain match (
∆h
FE) is defined as:
∆h
FE =
3Measured at I
C = 10
µA and guaranteed by design over the specified range of I
C.
4This is the maximum change in V
OS as VCB is swept from 0 V to 40 V.
5Guaranteed by design.
6I
CC and ICES are verified by measurement of ICBO.
7Sample tested.
Specifications subject to change without notice.
100 (
∆I
B) (hFE min)
IC
MAT02–SPECIFICATIONS
(@ VCB = 15 V, IC = 10 A, TA = 25 C, unless otherwise noted.)



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