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AN2784 数据表(PDF) 9 Page - STMicroelectronics

部件名 AN2784
功能描述  Using the high-density STM32F10xxx FSMC peripheral to drive external memories
PDF  31 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

AN2784 数据表(HTML) 9 Page - STMicroelectronics

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AN2784
Interfacing with a nonmultiplexed, asynchronous 16-bit NOR Flash memory
Doc ID 14779 Rev 4
9/31
2
Interfacing with a nonmultiplexed, asynchronous
16-bit NOR Flash memory
2.1
FSMC configuration
To control a NOR Flash memory, the FSMC provides the following possible features:
Select the bank to be used to map the NOR Flash memory: there are 4 independent
banks which can be used to interface with NOR Flash/SRAM/PSRAM memories, each
bank has a separate Chip Select pin.
Enable or disable the address/data multiplexing feature
Select the memory type to be used: NOR Flash/SRAM/PSRAM
Define the external memory databus width: 8/16 bits
Enable or disable the burst access mode for synchronous NOR Flash memories
Configure the use of the wait signal: enable/disable, polarity setting and timing
configuration.
Enable or disable the extended mode: this mode is used to access the memory with a
different timing configuration for read and write operations.
As the NOR Flash/PSRAM controller can support asynchronous and synchronous
memories, the user should select only the used parameters depending on the memory
characteristics.
The FSMC also provides the possibility of programming several parameters to correctly
interface with the external memory. Depending on the memory type, some parameters are
not used.
In the case where an external asynchronous nonmultiplexed memory is used, the user has
to compute and set the following parameters depending on the information in the memory
datasheet:
ADDSET: address setup time
DATAST: data setup time
ACCMOD: access mode
This parameter gives the FSMC the flexibility to access a wide variety of asynchronous
static memories. There are four extended access modes (A, B, C and D) that allow
write access while reading the memory with different timings, if the memory supports
this kind of feature.
When the extended mode is enabled, the FSMC_BTR register is used for read
operations and the FSMC_BWR register is used for write operations.
In the case where a synchronous memory is used, the user has to compute and set the
following parameters:
CLKDIV: clock divide ratio
DATLAT: data latency
Note that NOR Flash memory read operations can be synchronous if the memory supports
this mode, while write operations usually remain asynchronous.
When programming a synchronous NOR Flash memory, the memory automatically switches
between the synchronous and the asynchronous mode, so in this case, all parameters have
to be set correctly.



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