LNBH26LS datasheet(16/33 Pages) STMICROELECTRONICS

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Typical application circuits

LNBH26LS

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DocID025504 Rev 1

Table 5: LNBH26LS DiSEqC 1.x bill of material

Component

Notes

R1 (RSEL)

SMD resistor. Refer to Table 12: "Electrical characteristics of section A/B" and ISEL

pin description in Table 2: "Pin description" .

> 25 V electrolytic capacitor, 100 µF or higher is suitable

> 25 V ceramic capacitor, 10 µF or higher is suitable.

With COMP = 0, > 25 V electrolytic capacitor, 100 µF or higher is suitable

with COMP = 1, > 35 V ceramic capacitor, 22 µF (or 2 x 10 µF) or higher is suitable.

From 470 nF to 2.2 µF ceramic capacitor placed as closer as possible to VUP pins.

Higher values allow lower DC-DC noise.

From 100 nF to 220 nF ceramic capacitor placed as closer as possible to VOUT pins.

Higher values allow lower DC-DC noise.

C4, C7

220 nF ceramic capacitors. To be placed as closer as possible to VOUT pin.

STPS130A or similar Schottky diode.

1N4001-07, S1A-S1M, or any similar general purpose rectifier.

BAT54, BAT43, 1N5818, or any low power Schottky diode with IF (AV) > 0.2 A, VRRM >

25 V, VF < 0.5 V. To be placed as closer as possible to VOUT pin.

With COMP=0, use 10 µH inductor with ISAT > IPEAK where IPEAK is the boost converter

peak current. or

with COMP=1 and C2 = 22 µF, use 6.8 µH inductor with ISAT > IPEAK where IPEAK is the

boost converter peak current.

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