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STM32F479AI 数据表(PDF) 156 Page - STMicroelectronics |
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STM32F479AI 数据表(HTML) 156 Page - STMicroelectronics |
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156 / 208 page  Electrical characteristics STM32F479xx 156/208 DocID028010 Rev 2 Figure 52. ADC accuracy characteristics 1. See also Table 79. 2. Example of an actual transfer curve. 3. Ideal transfer curve. 4. End point correlation line. 5. ET = Total Unadjusted Error: maximum deviation between the actual and the ideal transfer curves. EO = Offset Error: deviation between the first actual transition and the first ideal one. EG = Gain Error: deviation between the last ideal transition and the last actual one. ED = Differential Linearity Error: maximum deviation between actual steps and the ideal one. EL = Integral Linearity Error: maximum deviation between any actual transition and the end point correlation line. Figure 53. Typical connection diagram using the ADC 1. Refer to Table 77 for the values of RAIN, RADC and CADC. 2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the pad capacitance (roughly 5 pF). A high Cparasitic value downgrades conversion accuracy. To remedy this, fADC should be reduced. |
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