STM32F479AI datasheet(158/208 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F479xx

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DocID028010 Rev 2

5.3.25

Temperature sensor characteristics

5.3.26

VBAT monitoring characteristics

5.3.27

Reference voltage

The parameters given in Table 86 are derived from tests performed under ambient

temperature and VDD supply voltage conditions summarized in Table 17.

Table 83. Temperature sensor characteristics

Symbol

Parameter

Min

Typ

Max

Unit

TL(1)

VSENSE linearity with temperature

±1

±2°C

Avg_Slope(1) Average slope

2.5

mV/°C

V25(1)

Voltage at 25 °C

0.76

tSTART(2)

Startup time

µs

TS_temp(2)

ADC sampling time when reading the temperature (1 °C accuracy)

1. Based on test during characterization.

2. Guaranteed by design.

Table 84. Temperature sensor calibration values

Symbol

Parameter

Memory address

TS_CAL1

TS ADC raw data acquired at temperature of 30 °C, VDDA= 3.3 V

0x1FFF 7A2C - 0x1FFF 7A2D

TS_CAL2

TS ADC raw data acquired at temperature of 110 °C, VDDA= 3.3 V 0x1FFF 7A2E - 0x1FFF 7A2F

Table 85. VBAT monitoring characteristics

Symbol

Parameter

Min

Typ

Max

Unit

Resistor bridge for VBAT

-50-

Ratio on VBAT measurement

Er(1)

Error on Q

–1

TS_vbat(2)(2)

ADC sampling time when reading the VBAT

1 mV accuracy

µs

1. Guaranteed by design.

2. Shortest sampling time can be determined in the application by multiple iterations.

Table 86. internal reference voltage

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VREFINT

Internal reference voltage

–40 °C < TA < +105 °C

1.18

1.21

1.24

TS_vrefint(1)

ADC sampling time when reading the

internal reference voltage

µs

VRERINT_s(2)

Internal reference voltage spread over the

temperature range

VDD = 3V ± 10mV

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