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MPI4040R3-2R2-R 数据表(PDF) 4 Page - Texas Instruments

部件名 MPI4040R3-2R2-R
功能描述  3.5 V to 36 V Wide-VIN Synchronous 2.1 MHz Step-Down Converters
PDF  40 Pages
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制造商  TI1 [Texas Instruments]
网页  http://www.ti.com
标志 TI1 - Texas Instruments

MPI4040R3-2R2-R 数据表(HTML) 4 Page - Texas Instruments

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LM53602, LM53603
SNVSAR0 – NOVEMBER 2016
www.ti.com
Product Folder Links: LM53602 LM53603
Submit Documentation Feedback
Copyright © 2016, Texas Instruments Incorporated
Pin Functions (continued)
PIN
I/O(1)
DESCRIPTION
NO.
NAME
15, 16
PGND
G
Power ground to internal low-side MOSFET. Connect to AGND and system ground. Connect pins 15
and 16 directly together at the PCB.
17
EP
G
Exposed die attach paddle. Connect to ground plane for adequate heat sinking and noise reduction.
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. Values given
are D.C.
(2)
A maximum of 42 V can be sustained at this pin for a duration of
≤ 500 ms at a duty cycle of ≤ 0.01%.
(3)
Transients on this pin, not exceeding –3 V or +40 V, can be tolerated for a duration of
≤ 100 ns. For transients between 40 V and 42 V,
see note (2).
(4)
Positive current flows into this pin.
(5)
A transient voltage of ±2 V can be sustained for
≤1 µs.
7 Specifications
7.1 Absolute Maximum Ratings
over the recommended operating junction temperature range of –40°C to 150°C (unless otherwise noted)
(1)
PARAMETER
MIN
MAX
UNIT
VIN to AGND, PGND(2)
–0.3
40
V
SW to AGND, PGND(3)
–0.3
VIN + 0.3
V
CBOOT to SW
–0.3
3.6
V
EN to AGND, PGND(2)
–0.3
40
V
BIAS to AGND, PGND
–0.3
16
V
FB to AGND, PGND : fixed 5 V and 3.3 V
–0.3
16
V
FB to AGND, PGND : ADJ
–0.3
5.5
V
RESET to AGND, PGND
–0.3
8
V
SYNC, FPWM, to AGND, PGND
–0.3
5.5
V
VCC to AGND, PGND
–0.3
4.2
V
RESET pin current(4)
–0.1
1.2
mA
AGND to PGND(5)
–0.3
0.3
V
Storage temperature, Tstg
–40
150
°C
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic
discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-
001(1)
Pins 1, 2, 3, 12, 13,
±1500
V
Pins 11, 5, 8, 9, 6, 7, 4
±2500
Charged-device model (CDM), per JEDEC specification
JESD22-C101(2)
Pins 3, 4, 5, 6, 7, 11, 12
and 13
±750
Pins 1, 2, 8, 9, 15 and 16
±500



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