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STM32L475VC 数据表(PDF) 87 Page - STMicroelectronics |
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STM32L475VC 数据表(HTML) 87 Page - STMicroelectronics |
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87 / 193 page ![]() DocID027692 Rev 2 87/193 STM32L475xx Electrical characteristics 181 6.3.4 Embedded voltage reference The parameters given in Table 25 are derived from tests performed under the ambient temperature and supply voltage conditions summarized in Table 22: General operating conditions. Table 25. Embedded internal voltage reference Symbol Parameter Conditions Min Typ Max Unit VREFINT Internal reference voltage –40 °C < TA < +130 °C 1.182 1.212 1.232 V tS_vrefint (1) ADC sampling time when reading the internal reference voltage -4(2) -- µs tstart_vrefint Start time of reference voltage buffer when ADC is enable -- 8 12(2) µs IDD(VREFINTBUF) VREFINT buffer consumption from VDD when converted by ADC - - 12.5 20(2) µA ∆VREFINT Internal reference voltage spread over the temperature range VDD = 3 V - 5 7.5(2) mV TCoeff Average temperature coefficient –40°C < TA < +130°C - 30 50(2) ppm/°C ACoeff Long term stability 1000 hours, T = 25°C - - TBD(2) ppm VDDCoeff Average voltage coefficient 3.0 V < VDD < 3.6 V - 250 1200(2) ppm/V VREFINT_DIV1 1/4 reference voltage - 24 25 26 % VREFINT VREFINT_DIV2 1/2 reference voltage 49 50 51 VREFINT_DIV3 3/4 reference voltage 74 75 76 1. The shortest sampling time can be determined in the application by multiple iterations. 2. Guaranteed by design. |
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