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ADP5090ACPZ-1-R7 数据表(PDF) 14 Page - Analog Devices |
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ADP5090ACPZ-1-R7 数据表(HTML) 14 Page - Analog Devices |
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14 / 22 page ![]() Data Sheet ADP5090 Rev. C | Page 13 of 21 BACKUP STORAGE PATH The ADP5090 provides an optional backup storage energy path, an integrated backup controller, and two back to back power switches between the BACK_UP pin and the SYS pin. When the system operates at a condition where the harvested and stored energy is periodically insufficient, a backup energy storage element can be attached to the BACK_UP pin. The backup controller enables when the SYS voltage is above 1.5 V (typical). When the BACK_UP pin voltage is higher than the BAT pin voltage, it turns on the internal power switches between the BACK_UP pin and the SYS pin. When the BACK_UP pin voltage is lower than the BAT pin voltage, the internal power switches are turned off. The 185 mV (typical) comparator input offset of the BAT pin prevents the input source and BAT pin charging the BACK_UP pin (see Figure 32). In addition, the backup storage element can bypass the cold startup with inrush current protection circuitry. When the system current exceeds the internal current limit of 400 mA (typical), the BACK_UP switches turn off. Nevertheless, the current capability is only 250 µA (typical) when plugging in the backup battery for the first time. Restricting the system load current from the SYS pin ensures that the power path can enter normal operation status. Table 6 explains the power path working state. For long-term store mode, remove the backup storage element and then discharge SYS to ground. MINOP FUNCTION When the energy generated by the harvester cannot sustain the steady working state, the MINOP function can disable the boost regulator to prevent discharging the storage element. The MINOP function disables the MPPT function to achieve the lowest quiescent current of 260 nA (typical). When the voltage of the CBP pin decreases to the threshold set by the resistor at the MINOP pin, the boost regulator stops switching. Disable this function by connecting MINOP to AGND. The typical MINOP bias current is 2 μA. DISABLING BOOST For noise or EMI sensitive applications, the boost switcher can be stopped temporarily by pulling the DIS_SW pin high to prevent interference with RF circuits. The boost switching resumes when the DIS_SW pin is pulled low. The transition delay is less than 1 μs (typical). BATTERY OVERCHARGING PROTECTION To prevent rechargeable batteries from being overcharged and damaged, the battery terminal voltage (VBAT_TERM) must be set by using external resistors. Figure 30 shows the VBAT_TERM rising threshold voltage given by Equation 2. + = TERM2 TERM1 REF TERM BAT R R V V 1 2 3 _ (2) Considering the quiescent current consumption, the sum of the resistors must be more than 6 MΩ, that is, RTERM1 + RTERM2 ≥ 6 MΩ The overvoltage falling threshold is given by VBAT_TERM_HYS, which is internally set to the overvoltage threshold minus an internal hysteresis voltage denoted by VBAT_TERM_HYS. When the voltage at the battery exceeds the VBAT_TERM threshold, the main boost regulator is disabled. The main boost starts again when the battery voltage falls below the VBAT_TERM_HYS level. When the input energy is excessive, the VBAT pin voltage ripples between the VBAT_TERM and the VBAT_TERM_HYS levels. Figure 30. The ADP5090 Program Paramater Setting BATTERY DISCHARGING PROTECTION To prevent rechargeable batteries from being deeply discharged and damaged, the battery discharge shutdown voltage (VBAT_SD) must be set by using external resistors. Figure 30 shows the VBAT_SD falling threshold voltage given by Equation 3. + = SD2 SD1 REF SD BAT R R V V 1 _ (3) The ADP5090 has an internal resistor, RBAT_SD_HYS = 103.5 kΩ (typical), to program the hysteresis, given by Equation 4. E HYS SD BAT SD BAT HYS SD BAT R R V V _ _ _ _ _ × = (4) where VBAT_SD_HYS contains an internal resistor to program the hysteresis. Considering the quiescent current consumption, the sum of the resistors that comprise the resistor divider (RBAT_SD_HYS, RSD1, and RSD2) must be more than 6 MΩ, that is, RBAT_SD_HYS + RSD1 + RSD2 ≥ 6 MΩ BAT RBAT_SD_HYS RSYS_PG_HYS TERM_REF SYS REF SETSD STEPG VREF TERM SDB PG SDB TERMS SDS PGS RE RSD1 RPG1 RTERM1 RSD2 RPG2 RTERM2 PG TRM TERM_REF BAT R 2R TERM CONTROL |
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