数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

ADP5090ACPZ-1-R7 数据表(PDF) 14 Page - Analog Devices

部件名 ADP5090ACPZ-1-R7
功能描述  Ultralow Power Boost Regulator with
PDF  22 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADP5090ACPZ-1-R7 数据表(HTML) 14 Page - Analog Devices

Back Button ADP5090ACPZ-1-R7 Datasheet HTML 10Page - Analog Devices ADP5090ACPZ-1-R7 Datasheet HTML 11Page - Analog Devices ADP5090ACPZ-1-R7 Datasheet HTML 12Page - Analog Devices ADP5090ACPZ-1-R7 Datasheet HTML 13Page - Analog Devices ADP5090ACPZ-1-R7 Datasheet HTML 14Page - Analog Devices ADP5090ACPZ-1-R7 Datasheet HTML 15Page - Analog Devices ADP5090ACPZ-1-R7 Datasheet HTML 16Page - Analog Devices ADP5090ACPZ-1-R7 Datasheet HTML 17Page - Analog Devices ADP5090ACPZ-1-R7 Datasheet HTML 18Page - Analog Devices Next Button
Zoom Inzoom in Zoom Outzoom out
 14 / 22 page
background image
Data Sheet
ADP5090
Rev. C | Page 13 of 21
BACKUP STORAGE PATH
The ADP5090 provides an optional backup storage energy path,
an integrated backup controller, and two back to back power
switches between the BACK_UP pin and the SYS pin. When the
system operates at a condition where the harvested and stored
energy is periodically insufficient, a backup energy storage
element can be attached to the BACK_UP pin. The backup
controller enables when the SYS voltage is above 1.5 V (typical).
When the BACK_UP pin voltage is higher than the BAT pin
voltage, it turns on the internal power switches between the
BACK_UP pin and the SYS pin. When the BACK_UP pin
voltage is lower than the BAT pin voltage, the internal power
switches are turned off. The 185 mV (typical) comparator input
offset of the BAT pin prevents the input source and BAT pin
charging the BACK_UP pin (see Figure 32).
In addition, the backup storage element can bypass the cold
startup with inrush current protection circuitry. When the
system current exceeds the internal current limit of 400 mA
(typical), the BACK_UP switches turn off. Nevertheless, the
current capability is only 250 µA (typical) when plugging in the
backup battery for the first time. Restricting the system load
current from the SYS pin ensures that the power path can enter
normal operation status. Table 6 explains the power path working
state. For long-term store mode, remove the backup storage
element and then discharge SYS to ground.
MINOP FUNCTION
When the energy generated by the harvester cannot sustain the
steady working state, the MINOP function can disable the boost
regulator to prevent discharging the storage element. The
MINOP function disables the MPPT function to achieve the
lowest quiescent current of 260 nA (typical). When the voltage
of the CBP pin decreases to the threshold set by the resistor at
the MINOP pin, the boost regulator stops switching. Disable
this function by connecting MINOP to AGND. The typical
MINOP bias current is 2 μA.
DISABLING BOOST
For noise or EMI sensitive applications, the boost switcher can
be stopped temporarily by pulling the DIS_SW pin high to
prevent interference with RF circuits. The boost switching
resumes when the DIS_SW pin is pulled low. The transition
delay is less than 1 μs (typical).
BATTERY OVERCHARGING PROTECTION
To prevent rechargeable batteries from being overcharged and
damaged, the battery terminal voltage (VBAT_TERM) must be set by
using external resistors. Figure 30 shows the VBAT_TERM rising
threshold voltage given by Equation 2.
+
=
TERM2
TERM1
REF
TERM
BAT
R
R
V
V
1
2
3
_
(2)
Considering the quiescent current consumption, the sum of the
resistors must be more than 6 MΩ, that is,
RTERM1 + RTERM2 ≥ 6 MΩ
The overvoltage falling threshold is given by VBAT_TERM_HYS,
which is internally set to the overvoltage threshold minus an
internal hysteresis voltage denoted by VBAT_TERM_HYS. When the
voltage at the battery exceeds the VBAT_TERM threshold, the main
boost regulator is disabled. The main boost starts again when
the battery voltage falls below the VBAT_TERM_HYS level. When the
input energy is excessive, the VBAT pin voltage ripples between
the VBAT_TERM and the VBAT_TERM_HYS levels.
Figure 30. The ADP5090 Program Paramater Setting
BATTERY DISCHARGING PROTECTION
To prevent rechargeable batteries from being deeply discharged
and damaged, the battery discharge shutdown voltage (VBAT_SD)
must be set by using external resistors. Figure 30 shows the
VBAT_SD falling threshold voltage given by Equation 3.


+
=
SD2
SD1
REF
SD
BAT
R
R
V
V
1
_
(3)
The ADP5090 has an internal resistor, RBAT_SD_HYS = 103.5 kΩ
(typical), to program the hysteresis, given by Equation 4.
E
HYS
SD
BAT
SD
BAT
HYS
SD
BAT
R
R
V
V
_
_
_
_
_
×
=
(4)
where VBAT_SD_HYS contains an internal resistor to program the
hysteresis.
Considering the quiescent current consumption, the sum of the
resistors that comprise the resistor divider (RBAT_SD_HYS, RSD1, and
RSD2) must be more than 6 MΩ, that is,
RBAT_SD_HYS + RSD1 + RSD2 ≥ 6 MΩ
BAT
RBAT_SD_HYS
RSYS_PG_HYS
TERM_REF
SYS
REF
SETSD
STEPG
VREF
TERM
SDB
PG
SDB
TERMS
SDS
PGS
RE
RSD1
RPG1
RTERM1
RSD2
RPG2
RTERM2
PG
TRM
TERM_REF
BAT
R
2R
TERM
CONTROL



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com