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FT260Q-R 数据表(PDF) 28 Page - Future Technology Devices International Ltd.

部件名 FT260Q-R
功能描述  HID-class USB to UART/I2C Bridge IC
PDF  61 Pages
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制造商  FTDI [Future Technology Devices International Ltd.]
网页  http://www.ftdichip.com
标志 FTDI - Future Technology Devices International Ltd.

FT260Q-R 数据表(HTML) 28 Page - Future Technology Devices International Ltd.

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Copyright © Future Technology Devices International Limited
28
FT260 HID-CLASS USB TO UART/I2C BRIDGE IC
Version 1.1
Document No.: FT_001272 Clearance No.: FTDI#484
6
Devices Characteristics and Ratings
6.1
Absolute Maximum Ratings
The absolute maximum ratings for the FT260 devices are as follows. These are in accordance with the
Absolute Maximum Rating System (IEC 60134). Exceeding these may cause permanent damage to the
device.
Parameter
Value
Unit
Conditions
Storage Temperature
-65°C to 150°C
Degrees C
Floor Life (Out of Bag) At Factory Ambient
(30°C / 60% Relative Humidity)
168 Hours
(IPC/JEDEC J-
STD-033A MSL
Level 3
Compliant)*
Hours
Ambient Operating Temperature (Power
Applied)
-40°C to 85°C
Degrees C
MTTF FT260
TBD
Hours
VCCIN Supply Voltage
-0.3 to +5.5
V
VCCIO IO Voltage
-0.3 to +4.0
V
FSOURCE Supply Voltage
3.8±0.4
V
DC Input Voltage – USBDP and USBDM
-0.5 to +3.63
V
DC Input Voltage – High Impedance
Bi-directional (powered from VCCIO)
-0.3 to
+(VCCIO+0.5V)
V
DC Output Voltage
3.3±0.15
V
VOUT3V3
DC Output Current – Outputs
100 **
mA
Table 6.1 Absolute Maximum Ratings
* If devices are stored out of the packaging beyond this time limit the devices should be baked before
use. The devices should be ramped up to a temperature of +125°C and baked for up to 17 hours.
** This DC output current on VOUT3V3 is also the power supply source for FT260 operation. If it must be
the source for other components in the system, it can only supply 75mA or less.
6.2
ESD and Latch-up Specifications
Description
Specification
Human Body Mode (HBM)
> ± 2kV
Machine mode (MM)
> ± 200V
Charged Device Mode (CDM)
> ± 500V
Latch-up
> ± 200mA
Table 6.2 ESD and Latch-Up Specifications



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