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AM29F016 数据表(PDF) 26 Page - Advanced Micro Devices

部件名 AM29F016
功能描述  16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
PDF  36 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29F016 数据表(HTML) 26 Page - Advanced Micro Devices

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Am29F016
AC CHARACTERISTICS
Write/Erase/Program Operations
Notes:
1. This does not include the preprogramming time.
2. Not 100% tested.
3. These timings are for Temporary Sector Group Unprotect operation.
Parameter Symbol
Parameter Description
Speed Options (Notes 1 and 2)
Unit
JEDEC
Standard
-75
-90
-120
-150
tAVAV
tWC
Write Cycle Time
Min
70
90
120
150
ns
tAVWL
tAS
Address Setup Time
Min
0000
ns
tWLAX
tAH
Address Hold Time
Min
40455050
ns
tDVWH
tDS
Data Setup Time
Min
40
45
50
50
ns
tWHDX
tDH
Data Hold Time
Min
0000
ns
tOEH
Output
Enable
Hold Time
Read 2
Min
0000
ns
Toggle Bit I and Data Polling
2
Min
10101010
ns
tGHWL
tGHWL
Read Recover Time Before Write
(OE high to WE low)
Min
0000
ns
tELWL
tCS
CE Setup Time
Min
0000
ns
tWHEH
tCH
CE Hold Time
Min
0000
ns
tWLWH
tWP
Write Pulse Width
Min
40
45
50
50
ns
tWHWL
tWPH
Write Pulse Width High
Min
20
20
20
20
ns
tWHWH1
tWHWH1
Byte Programming Operation
Typ
7777
µs
tWHWH2
tWHWH2
Sector Erase Operation 1
Typ
1111
sec
Max
8888
sec
tVCS
VCC Set Up Time 2
Min
50
50
50
50
µs
tVIDR
Rise Time to VID (Notes 2, 3)
Min
500
500
500
500
ns
tVLHT
Voltage Transition Time (Notes 2, 3)
Min
4444
µs
tOESP
OE Setup Time to WE Active (Notes 2, 3)
Min
4444
µs
tRP
RESET Pulse Width
Min
500
500
500
500
ns
tBUSY
Program/Erase Valid to RY/BY Delay
Min
40
40
50
60
ns



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