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AM29F016 数据表(PDF) 17 Page - Advanced Micro Devices |
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AM29F016 数据表(HTML) 17 Page - Advanced Micro Devices |
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17 / 36 page ![]() Am29F016 17 Furthermore, DQ2 can also be used to determine which sector is being erased. When the device is in the erase mode, DQ2 toggles if this bit is read from the erasing sector. RY/BY Ready/Busy The Am29F016 provides a RY/BY open-drain output pin as a way to indicate to the host system that the Em- bedded Algorithms are either in progress or has been completed. If the output is low, the device is busy with either a program or erase operation. If the output is high, the device is ready to accept any read/write or erase operation. When the RY/BY pin is low, the device will not accept any additional program or erase com- mands with the exception of the Erase Suspend com- mand. If the Am29F016 is placed in an Erase Suspend mode, the RY/BY output will be high. During programming, the RY/BY pin is driven low after the rising edge of the fourth WE pulse. During an erase operation, the RY/BY pin is driven low after the rising edge of the sixth WE pulse. The RY/BY pin will indicate a busy condition during the RESET pulse. Refer to Figure 13 for a detailed timing diagram. The RY/BY pin is pulled high in standby mode. Since this is an open-drain output, several RY/BY pins can be tied together in parallel with a pull-up resistor to VCC. RESET Hardware Reset The Am29F016 device may be reset by driving the RESET pin to VIL. The RESET pin must be kept low (VIL) for at least 500 ns. Any operation in progress will be terminated and the internal state machine will be reset to the read mode 20 µs after the RESET pin is driven low. If a hardware reset occurs during a pro- gram operation, the data at that particular location will be indeterminate. When the RESET pin is low and the internal reset is complete, the device goes to standby mode and cannot be accessed. Also, note that all the data output pins are tri-stated for the duration of the RESET pulse. Once the RESET pin is taken high, the device requires 500 ns of wake up time until outputs are valid for read access. The RESET pin may be tied to the system reset input. Therefore, if a system reset occurs during the Embed- ded Program or Erase Algorithm, the device will be au- tomatically reset to read mode and this will enable the system’s microprocessor to read the boot-up firmware from the Flash memory. Data Protection The Am29F016 is designed to offer protection against accidental erasure or programming caused by spurious system level signals that may exist during power transi- tions. During power up the device automatically resets the internal state machine in the Read mode. Also, with its control register architecture, alteration of the mem- ory contents only occurs after successful completion of specific multi-bus cycle command sequences. The device also incorporates several features to pre- vent inadvertent write cycles resulting from VCC power-up and power-down transitions or system noise. Low VCC Write Inhibit To avoid initiation of a write cycle during VCC power-up and power-down, a write cycle is locked out for VCC less than 3.2 V (typically 3.7 V). If VCC < VLKO, the com- mand register is disabled and all internal program/ erase circuits are disabled. Under this condition the de- vice will reset to the read mode. Subsequent writes will be ignored until the VCC level is greater than VLKO. It is the user’s responsibility to ensure that the control pins are logically correct to prevent unintentional writes when VCC is above 3.2 V. Write Pulse “Glitch” Protection Noise pulses of less than 5 ns (typical) on OE, CE or WE will not initiate a write cycle. Logical Inhibit Writing is inhibited by holding any one of OE = VIL, CE = VIH or WE = VIH. To initiate a write cycle CE and WE must be a logical zero while OE is a logical one. Power-Up Write Inhibit Power-up of the device with WE = CE = VIL and OE = VIH will not accept commands on the rising edge of WE. The internal state machine is auto- matically reset to the read mode on power-up. |
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