AM29F016 datasheet(34/36 Pages) AMD

34 / 36 page

Am29F016

ERASE AND PROGRAMMING PERFORMANCE

Notes:

1. 25

°C, 5 V V

CC, 100,000 cycles.

2. Although Embedded Algorithms allow for a longer chip program and erase time, the actual time will be considerably less since

bytes program or erase significantly faster than the worst case byte.

3. Under worst case condition of 90

°C, 4.5 V V

CC, 100,000 cycles.

LATCHUP CHARACTERISTIC

Includes all pins except VCC. Test conditions: VCC = 5.0 Volt, one pin at a time.

TSOP PIN CAPACITANCE

Notes:

1. Sampled, not 100% tested.

2. Test conditions TA = 25°C, f = 1.0 MHz.

Parameter

Limits

Unit

Comments

Min

Typ

Max

Sector Erase Time

1 (Note 1)

sec

Excludes 00H programming prior

to erasure

Chip Erase Time

256

sec

Excludes 00H programming prior

to erasure

Byte Programming Time

300 (Note 3)

µs

Excludes system-level overhead

Chip Programming Time

14.4 (Note 1)

43.2 (Notes 2, 3)

sec

Excludes system-level overhead

Min

Max

Input Voltage with respect to VSS on I/O pins

–1.0 V

VCC + 1.0 V

VCC Current

–100 mA

+100 mA

Parameter

Symbol

Parameter Description

Test Conditions

Min

Max

Unit

CIN

Input Capacitance

VIN = 0

7.5

COUT

Output Capacitance

VOUT = 0

8.5

CIN2

Control Pin Capacitance

VIN = 0

7.5

AM29F016 数据表(PDF) 34 Page - Advanced Micro Devices

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