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STGAP1S 数据表(PDF) 1 Page - STMicroelectronics

部件名 STGAP1S
功能描述  gapDRIVE™: galvanically isolated single gate driver
PDF  67 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGAP1S 数据表(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
May 2015
DocID027190 Rev 3
1/67
STGAP1S
gapDRIVE™: galvanically isolated single gate driver
Datasheet
- production data
Features
 Qualified for automotive applications according
to AEC-Q100
 High voltage rail up to 1500 V
 Driver current capability: 5 A sink/source
current at 25 °C
 dV/dt transient immunity ± 50 V/ns in full
temperature range
 Overall input/output propagation delay: 100 ns
 Separate sink and source for easy gate driving
configuration
 Negative gate drive ability
 Active Miller clamp
 Desaturation detection
 SENSE input
 VCE active clamping
 Output 2-level turn-off
 Diagnostic status output
 UVLO and OVLO functions
 Programmable input deglitch filter
 Asynchronous stop command
 Programmable deadtime, with violation error
 SPI interface for parameters programming
 Temperature warning and shutdown protection
 Self-diagnostic routines for protection features
 Full effective fault protection
Applications
 600/1200 V inverters
 Inverters for EV\HEV
 EV charging stations
 Industrial drives
 UPS equipment
 DC/DC converters
 Solar inverters
Description
The STGAP1S gapDRIVE™ is a galvanically
isolated single gate driver for N-channel
MOSFETs and IGBTs with advanced protection,
configuration and diagnostic features. The
architecture of the STGAP1S isolates the channel
from the control and the low voltage interface
circuitry through true galvanic isolation.
The gate driver is characterized by 5 A capability,
making the device also suitable for high power
inverter applications such as motor drivers in
hybrid and electric vehicles and in industrial
drives. The output driver section provides a rail-
to-rail output with the possibility to use a negative
gate driver supply.
The input to output propagation delay results
contained within 100 ns, providing high PWM
control accuracy.
Protection functions such as the Miller clamp,
desaturation detection, dedicated sense pin for
overcurrent detection, output 2-level turn-off, VCE
overvoltage protection, UVLO and OVLO are
included to easily design high reliability systems.
Open drain diagnostic outputs are present and
detailed device conditions can be monitored
through the SPI. Each function's parameter can
be programmed via the SPI, making the device
very flexible and allowing it to fit in a wide range of
applications. Separate sink and source outputs
provide high flexibility and bill of material
reduction for external components.
SO24W
www.st.com


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