| 数据搜索系统,热门电子元器件搜索 |
|
TNETV2685FIBZUT7 数据表(PDF) 23 Page - Texas Instruments |
|
|
|||||||||||||||||||||||||||||
TNETV2685FIBZUT7 数据表(HTML) 23 Page - Texas Instruments |
|
23 / 191 page ![]() TMS320DM647 TMS320DM648 www.ti.com SPRS372H – MAY 2007 – REVISED APRIL 2012 Table 2-4. Terminal Functions (continued) TERMINAL NAME NO TYPE( INTERNAL OPER DESCRIPTION 1) PULLUP/ VOLT PULLDOWN DDR_D16 B16 I/O/Z 1.8 V DDR2 Memory Controller External Data (continued) DDR_D17 C16 I/O/Z 1.8 V DDR_D18 D16 I/O/Z 1.8 V DDR_D19 E16 I/O/Z 1.8 V DDR_D20 B17 I/O/Z 1.8 V DDR_D21 C17 I/O/Z 1.8 V DDR_D22 D17 I/O/Z 1.8 V DDR_D23 E17 I/O/Z 1.8 V DDR_D24 C18 I/O/Z 1.8 V DDR_D25 D18 I/O/Z 1.8 V DDR_D26 B19 I/O/Z 1.8 V DDR_D27 C19 I/O/Z 1.8 V DDR_D28 B20 I/O/Z 1.8 V DDR_D29 D19 I/O/Z 1.8 V DDR_D30 C20 I/O/Z 1.8 V DDR_D31 E19 I/O/Z 1.8 V DDR_ODT0 E13 I/O/Z 1.8 V On-die termination signals to external DDR2 SDRAM. These pins are reserved for future use and should not be connected to the DDR_ODT1 A14 I/O/Z 1.8 V DDR2 SDRAM. Note: There are no on-die termination resistors implemented on the DM647/DM648 DSP die. DDR_CAS D10 I/O/Z 1.8 V DDR2 Memory Controller SDRAM column address strobe DDR_CKE B11 I/O/Z 1.8 V DDR2 Memory Controller SDRAM clock-enable DDR_DQGATE0 D7 I/O/Z 1.8 V DDR2 Memory Controller Data Strobe Gate DDR_DQGATE1 B6 I/O/Z 1.8 V DDR_DQGATE2 E18 I/O/Z 1.8 V DDR_DQGATE3 A21 I/O/Z 1.8 V DDR_DQM[0] B8 I/O/Z 1.8 V DDR2 Memory Controller Byte-enable Controls. Decoded from the low-order address bits. The number of address bits or byte DDR_DQM[1] D5 I/O/Z 1.8 V enables used depends on the width of external memory. Byte-write DDR_DQM[2] E15 I/O/Z 1.8 V enables for most types of memory. Can be directly connected to SDRAM read and write mask signal (SDQM). DDR_DQM[3] B21 I/O/Z 1.8 V DDR_DQS[0] A9 I/O/Z 1.8 V DDR2 Memory Controller Data Strobe [3:0] DDR_DQS[1] A7 I/O/Z 1.8 V DDR_DQS[2] A17 I/O/Z 1.8 V DDR_DQS[3] A20 I/O/Z 1.8 V DDR_DQS[0] A8 I/O/Z 1.8 V DDR2 Memory Controller Data Strobe [3:0] Negative DDR_DQS[1] A6 I/O/Z 1.8 V DDR_DQS[2] A16 I/O/Z 1.8 V DDR_DQS[3] A19 I/O/Z 1.8 V DDR_RAS E10 I/O/Z 1.8 V DDR2 Memory Controller SDRAM Row Address Strobe DDR_WE D11 I/O/Z 1.8 V DDR2 Memory Controller SDRAM Write Enable Copyright © 2007–2012, Texas Instruments Incorporated Device Overview 23 Submit Documentation Feedback Product Folder Link(s): TMS320DM647 TMS320DM648 |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |